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Erschienen in:
09.08.2018
Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2018
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Abstract
0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN–PT) thin films were deposited on (111)Pt/Ti/SiO2/Si substrates via the chemical solution deposition. Both of the annealing process and additive methanamide play an obvious part in the structure and electrical properties of PMN–PT films. The optimized high-qualitied PMN–PT thin film in present work is fabricated with the methanamide in the precursor and annealed at 650 °C for 20 min. The film exhibits pure perovskite phase and superior ferroelectricity. The saturation polarization Ps and remanent polarization Pr are 52.1 µC/cm2 and 18.7 µC/cm2 at 500 kV/cm with 1000 Hz. It also shows low leakage current density of approximately 1.0 × 10− 8 A/cm2 at 200 kV/cm.