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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 8/2014

01.08.2014

Effects of CaTiO3 on crystal structures and dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics via X-ray diffraction and Raman spectroscopy

verfasst von: Li Wang, Han Zhang, Yan Leng, Feng Shi, Xiping Jing

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2014

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Abstract

Ba(Zn1/3Nb2/3)O3–CaTiO3 (BZN–CT) ceramics were synthesized at 1,395 °C for 4 h using a conventional solid-state sintering technique, with CT contents of 0, 30, 60, 75, and 90 wt%. Crystal structures were analyzed by X-ray diffraction, and vibrational modes were obtained by Raman spectroscopy to evaluate the correlation between crystal structures, dielectric properties, and phonon modes of these ceramics. Increasing CT content can remarkably affect the crystal structures and dielectric properties of BZN–CT ceramics. Crystal symmetries decrease with CT concentration from cubic to hexagonal structure. The lattice constant and the degree of order also change accordingly. The ordered phases transform from 1:1 to 1:2 ordered structure with changing crystal structures. The relationship between the Raman shifts, the FWHM values, and the dielectric properties were obtained by Raman spectral analyses.
Vorheriger Artikel Structural, electrical and piezoelectric properties of V-, Nb- and W-substituted CaBi4Ti4O15 ceramics
Nächster Artikel RETRACTED ARTICLE: Preparation of ZnO nanoparticles using electrodeposition and co-precipitation techniques for dye-sensitized solar cells applications

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Metadaten
Titel
Effects of CaTiO3 on crystal structures and dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics via X-ray diffraction and Raman spectroscopy
verfasst von
Li Wang
Han Zhang
Yan Leng
Feng Shi
Xiping Jing
Publikationsdatum
01.08.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2014
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2032-x

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