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Erschienen in:
1984 | OriginalPaper | Buchkapitel
Effects of Donor Impurities on the Redistribution of Mn Acceptors in In1−xGaxAs
verfasst von : Ch. J. Hitzman, E. Silberg, T. Y. Chang, E. A. Caridi
Erschienen in: Secondary Ion Mass Spectrometry SIMS IV
Verlag: Springer Berlin Heidelberg
Enthalten in: Professional Book Archive
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The ditribution of impurities introduced during epitaxial growth or by ion implantation and impurity redistribution during subsequent annealing are of great importance due to their relevance to device fabrication [1–4]. Secondary Ion Mass Spectrometry (SIMS) has been used to study the redistribution of dopant level Mn in In1-XGaXAs. A variety of Ge donor and Mn acceptor doped layers and structures were incorporated during MBE growth of InGaAs layers on InP substrates at 500°C. Portions of each layer were annealed at temperatures of 650°C and 700°C for 4 hours.