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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 23/2018

10.10.2018

Effects of La doping on structural, magnetic, and ferroelectric properties of Aurivillius Bi6Fe1.4Co0.6Ti3O18 thin films

verfasst von: Xuzhong Zuo, Zhe Liu, Enjie He, Zhenzhen Hui, Jie Yang, Xuebin Zhu, Jianming Dai

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 23/2018

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Abstract

The effects of La ions substitution on the structural, magnetic, ferroelectric and leakage properties of Aurivillius Bi6−xLaxFe1.4Co0.6Ti3O18 (BLFCTO, 0 ≤ x ≤ 1) thin films are investigated. X-ray diffraction (XRD) refinement results indicate that all the samples have an orthorhombic crystal structure and the space group of B2cb. The coexistence of room-temperature ferromagnetism and ferroelectricity can be found in all the samples. Doping La ions can increase ferroelectricity magnitude and decrease leakage current. Furthermore, the energy conversion efficiency can be significantly improved from 16.0 to 53.1% due to the decrease of leakage current. The remanent magnetization 2Mr of 8.2 emu/cm3 and polarization 2Pr of 37.4 µC/cm2 are observed in the x = 0.6 sample. The changes of magnetic, ferroelectric, and leakage properties are discussed in terms of lattice distortion, grain size, oxygen vacancy and compactness. The present work provides an available way to explore room-temperature multiferroics (MFs) and optimize energy efficiency in Aurivillius compounds.
Vorheriger Artikel One-pot solvothermal synthesis of rGO-CAS nanobrick composites with enhanced photoelectric properties
Nächster Artikel On the frequency–voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures

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Metadaten
Titel
Effects of La doping on structural, magnetic, and ferroelectric properties of Aurivillius Bi6Fe1.4Co0.6Ti3O18 thin films
verfasst von
Xuzhong Zuo
Zhe Liu
Enjie He
Zhenzhen Hui
Jie Yang
Xuebin Zhu
Jianming Dai
Publikationsdatum
10.10.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 23/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0145-3

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