nach oben

Journal of Materials Science: Materials in Electronics

Erschienen in:

12.06.2019

Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films

verfasst von: Guankong Mo, Zimei Tang, Huan He, Jiahui Liu, Yuechun Fu, Xiaoming Shen

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2019

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

Transparent conducting Ga-doped ZnO (GZO) thin films were deposited on glass substrate by pulsed laser deposition (PLD). The effects of laser pulse energy ranging from 80 to 200 mJ on microstructural, surface morphology, electrical and optical properties of GZO films were investigated in detail. XRD patterns have shown that all samples were hexagonal wurtzite structure presenting predominant orientation along the (002) c-axis direction, and the film obtained at 160 mJ showed the optimal crystallinity. The Raman spectra demonstrate that GZO films have oxygen vacancies, Zinc interstitials, and residual stress. The compact, homogenous and flat surface morphology of GZO films were observed by AFM. Hall effect measurements revealed that the electrical properties of samples were dominated largely by the crystallinity and the minimum resistivity of 6.10 × 10⁻⁴ Ω cm was obtained when GZO film grown at 160 mJ. Optical transmission spectra displayed an average transmittance higher than 90.6% for all GZO samples in the visible range. The film deposited at 160 mJ exhibited the maximum figure of merit of 22.70 × 10⁻³ Ω⁻¹, owing to the low resistivity and high transmittance.

Vorheriger Artikel Temperature dependence of catalytic activity in graphene synthesis for Sn nanoparticles

Nächster Artikel Green hydrothermal synthesis of gold and palladium doped titanium dioxide nanoparticles for multifunctional performance

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

J. Ungula, B.F. Dejene, H.C. Swart, Band gap engineering, enhanced morphology and photoluminescence of undoped, Ga and/or Al-doped ZnO nanoparticles by reflux precipitation method. J. Lumin. 195, 54–60 (2018). https://doi.org/10.1016/j.jlumin.2017.11.007CrossRef

S. Guan, L. Yamawaki, P. Zhang, X. Zhao, Charge-transfer effect of GZO film on photochemical water splitting of transparent ZnO@GZO films by RF magnetron sputtering. Top. Catal. 61, 1585–1590 (2018). https://doi.org/10.1007/s11244-018-0916-3CrossRef

A. Tomeda, T. Ishibe, T. Taniguchi, R. Okuhata, K. Watanabe, Y. Nakamura, Enhanced thermoelectric performance of Ga-doped ZnO film by controlling crystal quality for transparent thermoelectric films. Thin Solid Films 666, 185–190 (2018). https://doi.org/10.1016/j.tsf.2018.09.045CrossRef

J. Chen, Y. Sun, X. Lv, D. Li, L. Fang, H. Wang, X. Sun, C. Huang, H. Yu, P. Feng, Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature. Appl. Surf. Sci. 317, 1000–1003 (2014). https://doi.org/10.1016/j.apsusc.2014.08.051CrossRef

L. Xu, X. Li, Y. Chen, F. Xu, Structural and optical properties of ZnO thin films prepared by sol–gel method with different thickness. Appl. Surf. Sci. 257, 4031–4037 (2011). https://doi.org/10.1016/j.apsusc.2010.11.170CrossRef

H. Chin, L. Chao, C. Wu, Crystal, optical, and electrical characteristics of transparent conducting gallium-doped zinc oxide films deposited on flexible polyethylene naphthalate substrates using radio frequency magnetron sputtering. Mater. Res. Bull. 79, 90–96 (2016). https://doi.org/10.1016/j.materresbull.2016.03.017CrossRef

G. Jo, J. Koh, Prunaa, Laser annealing effects on Ga dopants for ZnO thin films for transparent conducting oxide applications. Ceram. Int. 45, 6190–6196 (2019). https://doi.org/10.1016/j.ceramint.2018.12.096CrossRef

H. Kajii, Y. Mohri, H. Okui, M. Kondow, Y. Ohmori, Improved characteristics of conventional and inverted polymer photodetectors using phosphonic acid-based self-assembled monolayer treatment for interfacial engineering of Ga-doped ZnO electrodes. Jpn. J. Appl. Phys. 57, 03DA03 (2018). https://doi.org/10.7567/JJAP.57.03DA03CrossRef

O. Lassar, G. Merad, S. Lardjane, H. Si Abdelkader, A hybrid density functional study of optical and electronic properties of Al\Ga-codoped ZnO. Optik 179, 566–573 (2019). https://doi.org/10.1016/j.ijleo.2018.10.135CrossRef

10.

C. Lee, C. Jeon, B. Lee, S. Jeong, Abrupt conversion of the conductivity and band-gap in the sputter grown Ga-doped ZnO films by a change in growth ambient: effects of oxygen partial pressure. J. Alloys Compd. 742, 977–985 (2018). https://doi.org/10.1016/j.jallcom.2018.01.351CrossRef

11.

H. Song, H. Makino, J. Nomoto, N. Yamamoto, T. Yamamoto, Improved moisture stability of thin Ga-doped ZnO films by indium codoping. Appl. Surf. Sci. 457, 241–246 (2018). https://doi.org/10.1016/j.apsusc.2018.06.281CrossRef

12.

R. Horng, S. Ou, C. Huang, P. Ravadgar, C. Wu, Effects of Ga concentration and rapid thermal annealing on the structural, optoelectronic and photoluminescence properties of Ga-doped ZnO thin films. Thin Solid Films 605, 30–36 (2016). https://doi.org/10.1016/j.tsf.2015.12.006CrossRef

13.

M.T. Ferdaous, S.A. Shahahmadi, M.M.I. Sapeli, P. Chelvanathan, M. Akhtaruzzaman, S.K. Tiong, N. Amin, Interplay between variable direct current sputtering deposition process parameters and properties of ZnO: Ga thin films. Thin Solid Films 660, 538–545 (2018). https://doi.org/10.1016/j.tsf.2018.06.005CrossRef

14.

M. Sbeta, A. Atilgan, A. Atli, A. Yildiz, Influence of the spin acceleration time on the properties of ZnO: Ga thin films deposited by sol-gel method. J. Sol Gel. Sci. Technol. 86, 513–520 (2018). https://doi.org/10.1007/s10971-018-4652-8CrossRef

15.

H. Kang, Z. Lu, Z. Zhong, J. Gu, Structural, optical and electrical characterization of Ga-Mg co-doped ZnO transparent conductive films. Mater. Lett. 215, 102–105 (2018). https://doi.org/10.1016/j.matlet.2017.12.072CrossRef

16.

C. Tiena, K. Yua, T. Tsaia, M. Liu, Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films. Appl. Surf. Sci. 354, 79–84 (2015). https://doi.org/10.1016/j.apsusc.2015.02.154CrossRef

17.

E. Muchuweni, T.S. Sathiaraj, H. Nyakotyo, Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis. Ceram. Int. 42, 10066–10070 (2016). https://doi.org/10.1016/j.ceramint.2016.03.110CrossRef

18.

R.S. Ajimsha, A.K. Das, P. Misra, M.P. Joshi, L.M. Kukreja, R. Kumar, T.K. Sharma, S.M. Oak, Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition. J. Alloys Compd. 638, 55–58 (2015). https://doi.org/10.1016/j.jallcom.2015.02.162CrossRef

19.

J. Kim, I. Yer, Growth of ZnO nanowire arrays on Ga-doped ZnO transparent conductive layers. Ceram. Int. 41, 10227–10231 (2015). https://doi.org/10.1016/j.ceramint.2015.04.130CrossRef

20.

P.S. Shewale, S.H. Lee, N.K. Lee, Y.S. Yu, Oxygen pressure dependent structural and optoelectronic properties of pulsed laser deposited Ga-doped ZnO thin films. Mater. Res. Express 2, 046401 (2015). https://doi.org/10.1088/2053-1591/2/4/046401CrossRef

21.

S.D. Shinde, A.V. Deshmukh, S.K. Date, V.G. Sathe, K.P. Adhi, Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films. Thin Solid Films 520, 1212–1217 (2011). https://doi.org/10.1016/j.tsf.2011.06.094CrossRef

22.

H. Mahdhi, S. Alaya, J.L. Gauffier, K. Djessas, Z.B. Ayadi, Influence of thickness on the structural, optical and electrical properties of Ga-doped ZnO thin films deposited by sputtering magnetron. J. Alloys Compd. 695, 697–703 (2017). https://doi.org/10.1016/j.jallcom.2016.11.117CrossRef

23.

S. Yu, W. Zhang, L. Li, H. Dong, D. Xu, Y. Jin, Structural, electrical, photoluminescence and optical properties of n-type conducting, phosphorus-doped ZnO thin films prepared by pulsed laser deposition. Appl. Surf. Sci. 298, 44–49 (2014). https://doi.org/10.1016/j.apsusc.2014.01.037CrossRef

24.

G. Kaurn, A. Mitra, K.L. Yadav, Pulsed laser deposited Al-doped ZnO thin films for optical applications. Prog. Natl. Sci. Mater. Int. 25, 12–21 (2015). https://doi.org/10.1016/j.pnsc.2015.01.012CrossRef

25.

P.S. Shewale, S.H. Lee, Y.S. Yu, Pulse repetition rate dependent structural, surface morphological and optoelectronic properties of Ga-doped ZnO thin films grown by pulsed laser deposition. J. Alloys Compd. 725, 1106–1114 (2017). https://doi.org/10.1016/j.jallcom.2017.07.269CrossRef

26.

C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann, Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li. Appl. Phys. Lett. 83, 1974 (2003). https://doi.org/10.1063/1.1609251CrossRef

27.

A. Escobedo-Morales, U. Pal, Effect of In, Sb and Ga doping on the structure and vibrational modes of hydrothermally grown ZnO nanostructures. Curr. Appl. Phys. 11, 525–531 (2011). https://doi.org/10.1016/j.cap.2010.09.007CrossRef

28.

C. Lung, M. Toma, M. Pop, D. Marconi, A. Pop, Characterization of the structural and optical properties of ZnO thin films doped with Ga, Al and (Al + Ga). J. Alloys Compd. 725, 1238–1243 (2017). https://doi.org/10.1016/j.jallcom.2017.07.265CrossRef

29.

H.J. Al-Asedy, N. Bidin, K.N. Abbas, M.A. Al-Azawi, Structure, morphology and photoluminescence attributes of Al/Ga co-doped ZnO nanofilms: role of annealing time. Mater. Res. Bull. 97, 71–80 (2018). https://doi.org/10.1016/j.materresbull.2017.08.050CrossRef

30.

E. Muchuweni, T.S. Sathiaraj, H. Nyakotyo, Hydrothermal synthesis of ZnO nanowires on rf sputtered Ga and Al co-doped ZnO thin films for solar cell application. J. Alloys Compd. 721, 45–54 (2017). https://doi.org/10.1016/j.jallcom.2017.05.317CrossRef

31.

Y. Chen, F. Meng, F. Ge, G. Xu, F. Huang, Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: significance of controlling defect generation. Thin Solid Films 615, 19–24 (2016). https://doi.org/10.1016/j.tsf.2018.03.019CrossRef

32.

W. Liu, S. Wu, C. Hung, C. Tseng, Y. Chang, Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping. J. Alloys Compd. 616, 268–274 (2014). https://doi.org/10.1016/j.jallcom.2014.06.175CrossRef

33.

34.

N. Akin, B. Kinaci, Y. Ozen, S. Ozcelik, Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films. J. Mater. Sci.: Mater. Electron. 28, 7376–7384 (2017). https://doi.org/10.1007/s10854-017-6426-4CrossRef

35.

Y. Ko, K. Kim, Y. Kim, Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes. Superlattices Microstruct. 51, 933–941 (2012). https://doi.org/10.1016/j.spmi.2012.03.012CrossRef

36.

X. Du, J. Li, X. Bi, The role of Ga partial substitution for Al in the enhanced conductivity of transparent AZO thin film. J. Alloys Compd. 698, 128–132 (2017). https://doi.org/10.1016/j.jallcom.2016.12.248CrossRef

37.

A.S. Pugalenthi, R. Balasundaraprabhu, V. Gunasekaran, N. Muthukumarasamy, S. Prasanna, S. Jayakumar, Effect of thickness on the structural, optical and electrical properties of RF magnetron sputtered GZO thin films. Mater. Sci. Semicond. Process. 29, 176–182 (2015). https://doi.org/10.1016/j.mssp.2014.02.014CrossRef

38.

K. Seo, H. Shin, J. Lee, K. Chung, H. Kim, The effects of thickness on the electrical, optical, structural and morphological properties of Al and Ga co-doped ZnO films grown by linear facing target sputtering. Vacuum 101, 250–256 (2014). https://doi.org/10.1016/j.vacuum.2013.09.009CrossRef

39.

D. Kim, H. Kim, Initial vacuum effects on the properties of sputter deposited Ga-doped ZnO thin films. J. Alloys Compd. 709, 627–632 (2017). https://doi.org/10.1016/j.jallcom.2017.03.189CrossRef

40.

Yu. Zeng, XiFang Chen, Zao Yi, Yougen Yi, Xibin Xu, Fabrication of p-n heterostructure ZnO/Si moth-eye structures: antireflection, enhanced charge separation and photocatalytic properties. Appl. Surf. Sci. 441, 40–48 (2018). https://doi.org/10.1016/j.apsusc.2018.02.002CrossRef

41.

H. Wang, Y. Sun, L. Fang, L. Wang, B. Chang, X. Sun, L. Ye, Growth and characterization of high transmittance GZO films prepared by sol-gel method. Thin Solid Films 615, 19–24 (2016). https://doi.org/10.1016/j.spmi.2014.06.002CrossRef

42.

F.A. Garcés, N. Budini, R.D. Arce, J.A. Schmidt, Effect of thickness on structural and electrical properties of Al-doped ZnO films. Thin Solid Films 574, 162–168 (2015). https://doi.org/10.1016/j.tsf.2014.12.013CrossRef

Titel: Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films
verfasst von: Guankong Mo
Zimei Tang
Huan He
Jiahui Liu
Yuechun Fu
Xiaoming Shen
Publikationsdatum: 12.06.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 13/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01646-w

Neuer Inhalt

Bildnachweise

Smart-Manufacturing Dashboard Banner/© AdobeStock_583269095, VDI-Icon, Profil Icon, inhalt2, Springer Professional Modul/© Springer Fachmedien Wiesbaden GmbH, Nachhaltigkeitsaward Key Visual/© Cometis AG/Global ESG Monitor | Daniel Rupp | Generiert mit KI, Search Icon, Banner Hanser, Hacker-Angriff Cyber-Sicherheit Bank-IT/© FOTOKITA / Getty Images / iStock, Leads Kundenakquise/© Andrey Popov / stock.adobe.com, Schiffschraube/© Angelika Bentin | stock.adobe.com, Rudergelenkwelle/© Weicon GmbH & Co. KG, Zeitschrift Wissensmanagement Cover, PatentFit-Logo/© Springer Fachmedien Wiesbaden GmbH, Sustainibility Finance/© Robert Kneschke / stock.adobe.com / Springer Fachmedien Wiesbaden GmbH, Zukunftswerkstatt Sales Excellence 2024/© AndreyPopov / Getty Images / iStock, 2023_Antrieb/© supervisuell

Springer Professional

Abstract

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Weitere Artikel der Ausgabe 13/2019

Preparation and electro responsive properties of Mg-doped BaTiO3 with novel morphologies

Quantum chemical studies on synthesis, characterization and third order nonlinear optical properties of (E)-2-(benzo[d][1,3]dioxol-5-ylmethylene)hydrazinecarboxamide single crystal

The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

TEM study of incommensurate superstructure in Pb1−0.5xNbx((Zr0.52Sn0.48)0.955Ti0.045)1−xO3 ceramics with 0–1 switching characteristic strain and high energy storage density

Effects of SiO2/Cr2O3 ratios on microstructures and electrical properties of high voltage gradient ZnO varistors

Effect of discharge time on the size control of AgNPs prepared by non-thermal atmospheric plasma discharge

Neuer Inhalt

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.