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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 9/2014

01.09.2014

Effects of sintering temperatures on dielectric properties, vibrational modes and crystal structures in Ba[Sn0.32Zn0.68/3Nb1.36/3]O3 ceramics

verfasst von: Meihua Qiao, Yijie Bian, Guanghui Qi, Yan Leng, Chuanling Diao, Feng Shi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2014

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Abstracts

Ba[Sn0.32Zn0.68/3Nb1.36/3]O3 ceramics were sintered at different temperatures by conventional solid-state sintering method so as to clarify the effects of the sintering temperatures on vibrational modes, crystal structures and dielectric properties. Lattice vibrational spectra, obtained by Raman spectroscopy and Fourier transform far-infrared reflection (FTIR) spectroscopy, show the relationship among polar phonon modes, crystal structures and dielectric properties in Ba[Sn0.32Zn0.68/3Nb1.36/3]O3 ceramics as a function of sintering temperatures. Raman and FTIR active modes were indicated according to the group theory. The results demonstrate that dielectric constant and temperature coefficient of capacitance are closely related to Raman modes at 480 cm−1; dielectric loss values are closely connected with full width at half-maximum of A1g(Nb) and Eg(O) active modes with increasing temperatures, which can also be proved by FTIR.
Vorheriger Artikel Stress relaxation behavior and low cycle fatigue behavior of bulk SAC 305
Nächster Artikel Effects of substrate temperature on the structural and magnetic properties in Cr-doped ZnO films prepared by magnetron sputtering

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Metadaten
Titel
Effects of sintering temperatures on dielectric properties, vibrational modes and crystal structures in Ba[Sn0.32Zn0.68/3Nb1.36/3]O3 ceramics
verfasst von
Meihua Qiao
Yijie Bian
Guanghui Qi
Yan Leng
Chuanling Diao
Feng Shi
Publikationsdatum
01.09.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2014
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2139-0

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