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Erschienen in: Journal of Materials Science: Materials in Electronics 20/2019

24.09.2019

Effects of Sm2O3/SrO/LiF doping and cooling rate on sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics

verfasst von: Huajie Tao, Yao Fu, Pengzhen Li, Jian Li, Dongjian Wang, Yiting Shan, Hongqing Zhou

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 20/2019

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Abstract

The present study aims to synthesize (Zr0.8Sn0.2)TiO4 (ZST) ceramics and determine the optimum content of Sm2O3/SrO/LiF doping and cooling rate to improve processing and microwave dielectric properties of the ceramics. The initial content of three additives was preliminarily determined by analyzing the phase composition, microstructure, sintering characteristics and microwave dielectric performance of ZST ceramics samples. As a typical fluxing agent, the optimum LiF content was further explored, and the effects of different LiF contents on 0.8 wt% Sm2O3 + 0.4 wt% SrO doped ceramics were investigated. A suitable amount of liquid phase could be formed at a lower temperature when adding suitable LiF content into ceramics. The results showed the 0.3 wt% LiF not only promoted densification process but also reduced the sintering temperature to 1285 °C, which made the dielectric properties better. Moreover, the cooling rate also affected the performance of ZST ceramics, and the optimum cooling rate was determined through analyzing the lattice parameters and microstructure. Comparing the comprehensive properties of various ZST ceramics doped with 0.8 wt% Sm2O3 + 0.4 wt% SrO + 0.3 wt% LiF, the ceramic exhibited the densest microstructure and the best dielectric performance where εr = 39.66, Q × f = 45,150 GHz (f = 5.6 GHz), and τf = − 4.88 ppm/°C when the cooling rate was 1 °C/min and the sintering temperature was 1285 °C.

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Metadaten
Titel
Effects of Sm2O3/SrO/LiF doping and cooling rate on sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
verfasst von
Huajie Tao
Yao Fu
Pengzhen Li
Jian Li
Dongjian Wang
Yiting Shan
Hongqing Zhou
Publikationsdatum
24.09.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 20/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02237-5

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