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Erschienen in: Journal of Materials Science 12/2019

09.03.2019 | Electronic materials

Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene

verfasst von: Lingrui Xu, Liangliang Chen, Lijie Li, Xin Li

Erschienen in: Journal of Materials Science | Ausgabe 12/2019

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Abstract

Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.

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Metadaten
Titel
Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene
verfasst von
Lingrui Xu
Liangliang Chen
Lijie Li
Xin Li
Publikationsdatum
09.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 12/2019
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-019-03491-y

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