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Erschienen in:
01.04.2021 | Cover Story
"Efficiency levels over 98 % are essential"
Erschienen in: ATZelectronics worldwide | Ausgabe 4/2021
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Excerpt
The progress being made with power semiconductors is lending electric mobility more range. According to Mark Münzer, Vice President Innovation & Emerging Technologies SiC/GaN in the Automotive Division of Infineon Technologies, it is wide-bandgap-based power semiconductors in particular, efficiently represented by SiC components, that offer enormous advantages. He explains in the interview with ATZelectronics how range could be extended by up to 12 % by moving from the latest IGBT technology to second-generation CoolSiC with the same complement of batteries.
Mark Münzer is Vice President Innovation & Emerging Technologies and in this role responsible for high power switches based on SiC/GaN in the automotive sector of Infineon Technologies. He has worked on increasing the efficiency of semiconductors at Eupec/Infineon since completing his electrical and electronic degree at the University RWTH Aachen 23 years ago.
© Infineon
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