01.10.2017 | Ausgabe 10/2017
Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
- Zeitschrift:
- Optical and Quantum Electronics > Ausgabe 10/2017
Wichtige Hinweise
This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
Abstract
We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.