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Erschienen in:
2015 | OriginalPaper | Buchkapitel
Electrical and Photoluminescence Study of Undoped CuGaSe2 Single Crystal Thin Film
verfasst von : Sathiabama Thiru, Miki Fujita, Atsushi Kawaharazuka, Yoshiji Horikoshi
Erschienen in: The Malaysia-Japan Model on Technology Partnership
Verlag: Springer Japan
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Abstract
Photoluminescence (PL) characteristics have been studied on undoped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band edge and to the split-off valence band, but no discernible emission has been observed in the low-energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.715 and 1.68 eV which are attributed to the bound exciton and band-to-acceptor transition.