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Erschienen in: Optical and Quantum Electronics 1/2014

01.01.2014

Electrical properties and Pockels effect in BaTiO\(_{3}\)/SrTiO\(_{3}\) superlattices

verfasst von: Hassan Chaib, Ali Khalal, Es-Said El-Frikhe, Abdelhakim Nafidi, Hicham Charifi, Thami Ait Taleb, Ahmed Tirbiyine

Erschienen in: Optical and Quantum Electronics | Ausgabe 1/2014

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Abstract

The electrical and linear electro-optical properties of BaTiO\(_{3}\) (BT)/SrTiO\(_{3}\) (ST) superlattices epitaxially grown on ST substrate are theoretically investigated using a microscopic quantum mechanical model based on the orbital approximation in correlation with the dipole–dipole interaction. Both the first-, second-, and third-order electronic polarizabilities were considered in this calculation in order to obtain accurate results for both the spontaneous local electric field, spontaneous polarization, relative dielectric constant, and linear electro-optic coefficients (Pockels constants) of BT/ST superlattices. The calculations show that the spontaneous local electric field, spontaneous polarization and linear electro-optic coefficients of BT/ST superlattices increase with their content in BT while the relative dielectric constant increases with their content in ST. Moreover, we have shown that significant enhancement of the linear electro-optic coefficients can be achieved in BT/ST superlattices. This enhancement, which concerns the ST as well as the BT layers, arises from the combined effects of strain, induced in the BT layers by the epitaxial growth, and internal polarizing electric field originating in the BT layers and acting on the electronic clouds of the polarizable constituent ions of the system.

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Metadaten
Titel
Electrical properties and Pockels effect in BaTiO/SrTiO superlattices
verfasst von
Hassan Chaib
Ali Khalal
Es-Said El-Frikhe
Abdelhakim Nafidi
Hicham Charifi
Thami Ait Taleb
Ahmed Tirbiyine
Publikationsdatum
01.01.2014
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 1/2014
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-013-9738-5

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