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Erschienen in:
2012 | OriginalPaper | Buchkapitel
Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories
verfasst von : Qian Chen, Henrique L. Gomes, Asal Kiazadeh, Paulo R. F. Rocha, Dago M. De Leeuw, Stefan C. J. Meskers
Erschienen in: Technological Innovation for Value Creation
Verlag: Springer Berlin Heidelberg
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Electroforming of an Al/Al
2
O
3
/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10
17
/cm
2
. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.