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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 6/2017

01.06.2017

Electronic optical, properties and widening band gap of graphene with Ge doping

verfasst von: M. L. Ould Ne, A. Abbassi, A. G. El hachimi, A. Benyoussef, H. Ez-Zahraouy, A. El Kenz

Erschienen in: Optical and Quantum Electronics | Ausgabe 6/2017

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Abstract

The Density Functional Theory with full potential linearized augmented plane wave uses to study the pure graphene and doped with different amounts of Germanium (5.55, 8.33, and 12.5%). It uses also Generalized Gradient Approximation and Tran-Blaha modified Becke-Johnson formalism to investigate their electronic and optical properties. Furthermore, it utilizes Germanium is able to open band gap due to the p-states of Ge, which are in hybridization with p-states of Carbon. Germanium concentration decreasing or increasing can control the band gap opening of graphene system. The optical absorption increases in the ultraviolet range, due to the important absorption that contains germanium above 150 nm.
Vorheriger Artikel Study of entanglement entropy and exchange coupling in two-electron coupled quantum dots
Nächster Artikel An analytical treatment toward solution of fractional Schrödinger equation

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Literatur
Balandin, A.A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., Lau, C.N.: Superior thermal conductivity of single-layer graphene. Nano Lett. 8(3), 902–907 (2008)ADSCrossRef
Barone, V., Hod, O., Scuseria, G.E.: Electronic structure and stability of semiconducting graphene nanoribbons. Nano Lett. 6, 2748–2754 (2006)ADSCrossRef
Becke, A.D., Roussel, M.R.: Exchange holes in inhomogeneous systems: a coordinate-space model. Phys. Rev. A 39, 3761–3767 (1989)ADSCrossRef
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A.Y., Feng, R., et al.: Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B 108(52), 19912–19916 (2004)CrossRef
Blaha, P., Schwarz, K., Madsen, G., Kvasnicka, D., Luitz J.: WIEN 2k, Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties, Vienna, Austria (2001). http://​www.​wien2k.​at
Bonaccorso, F., Sun, Z., Hasan, T., Ferrari, A.C.: Graphene photonics and optoelectronics. Nat. Photonics 4(9), 611–622 (2010)ADSCrossRef
Chang, D.W., Choi, H.J., Filer, A., Baek, J.B.: Graphene in photovoltaic applications: organic photovoltaic cells (OPVs) and dye-sensitized solar cells (DSSCs). J. Mater. Chem. A 2(31), 12136–12149 (2014)CrossRef
Colace, L., Balbi, M., Masini, G., Assanto, G., Luan, H.C., Kimerling, L.C.: Ge on Si p-i-n photodiodes operating at 10 Gbit/s. Appl. Phys. Lett. 88(10), 101111–101114 (2006)ADSCrossRef
Denis, P.A.: Chemical reactivity and bandgap opening of graphene doped with Gallium, Germanium, Arsenic, and Selenium Atoms. ChemPhysChem 15(18), 3994–4000 (2014)CrossRef
Denis, P.A., Pereyra Huelmo, C., Martins, A.S.: Band gap opening in dual-doped monolayer graphene. J. Phys. Chem. C 120(13), 7103–7112 (2016)CrossRef
Dressel, M., Gruener, G., Bertsch, G. F.: Electrodynamics of solids: optical properties of electrons in matter. Am. J. Phys. 70(12), 1269–1270 (2002)ADSCrossRef
Dufek, P., Blaha, P., Schwarz, K.: Applications of Engel and Vosko’s generalized gradient approximation in solids. Phys. Rev. B 50(11), 7279–7283 (1994)ADSCrossRef
Dvorak M, Oswaldand W, Wu Z.: Pristine graphene patterning. Sci. Rep. 3, 2289–2296 (2013)ADSCrossRef
Fox, M.: Optical Properties of Solids. Oxford Master Series in Condensed Matter Physics, p. 305. Oxford University Press, New York (2001)
Geim, A.K., Novoselov, K.S.: The rise of graphene. Nat. Mater. 6(3), 183–191 (2007)ADSCrossRef
Haldane, F.D.M.: Model for a quantum Hall effect without Landau levels: condensed-matter realization of the “parity anomaly”. Phys. Rev. Lett. 61(18), 2015–2018 (1988)ADSCrossRef
Hashimoto, A., Suenaga, K., Gloter, A., Urita, K., Iijima, S.: Direct evidence for atomic defects in graphene layers. Nature 430(7002), 870–873 (2004)ADSCrossRef
Jones, R.E., Thomas, S.G., Bharatan, S., Thoma, R., Jasper, C., Zirkle, T., et al.: Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD. In: Electron Devices Meeting, 2002. IEDM’02. International, pp. 793–796. IEEE (2002)
Laref, A., Ahmed, A., Bin-Omran, S., Luo, S.J.: First-principle analysis of the electronic and optical properties of boron and nitrogen doped carbon mono-layer graphenes. Carbon 81, 179–192 (2015)CrossRef
Latham, C.D., McKenna, A.J., Trevethan, T.P., Heggie, M.I., Rayson, M.J., Briddon, P.R.: On the validity of empirical potentials for simulating radiation damage in graphite: a benchmark. J. Phys. Condens. Matter 27(31), 316301–316312 (2015)ADSCrossRef
Lee, C., Wei, X., Li, Q., Carpick, R., Kysar, J.W., Hone, J.: Elastic and frictional properties of graphene. Phys. Status Solidi (b) 246(11–12), 2562–2567 (2009)ADSCrossRef
Lin, Y.M., Dimitrakopoulos, C., Jenkins, K.A., Farmer, D.B., Chiu, H.Y., Grill, A., Avouris, P.: 100-GHz transistors from wafer-scale epitaxial graphene. Science 327(5966), 662 (2010)ADSCrossRef
Loschen, C., Carrasco, J., Neyman, K.M., Illas, F.: First-principles LDA + U and GGA + U study of cerium oxides: dependence on the effective U parameter. Phys. Rev. B 75(3), 035115–035123 (2007)ADSCrossRef
Mak, K.F., Ju, L., Wang, F., Heinz, T.F.: Optical spectroscopy of graphene: from the far infrared to the ultraviolet. Solid State Commun. 152(15), 1341–1349 (2012)ADSCrossRef
Morozov, S.V., Novoselov, K.S., Katsnelson, M.I., Schedin, F., Elias, D.C., Jaszczak, J.A., Geim, A.K.: Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100(1), 016602–016606 (2008)ADSCrossRef
Nair, R.R., Blake, P., Grigorenko, A.N., Novoselov, K.S., Booth, T.J., Stauber, T., et al.: Fine structure constant defines visual transparency of graphene. Science 320(5881), 1308 (2008)ADSCrossRef
Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., et al.: Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004)ADSCrossRef
Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996)
Perdew, J.P., Chevary, J.A., Vosko, S.H., Jackson, K.A., Pederson, M.R., Singh, D.J., Fiolhais, C.: Atoms, molecules, solids, and surfaces: applications of the generalized gradient approximation for exchange and correlation. Phys. Rev. B 46(11), 6671–6687 (1992)ADSCrossRef
Petersen, M., Wagner, F., Hufnagel, L., Scheffler, M., Blaha, P., Schwarz, K.: Improving the efficiency of FP-LAPW calculations. Comput. Phys. Commun. 126(3), 294–309 (2000)ADSCrossRefMATH
Rondinelli, J.M., Deng, B., Marks, L. D.: Enhancing structure relaxations for first-principles codes: an approximate Hessian approach. Comput. Mater. Sci. 40(3), 345–353 (2007)CrossRef
Safari, A., Hosseiniun, P., Rahbari, I., Kalhor, M.R.: Graphene based electronic device. World Acad. Sci. Eng. Technol. Int. J. Electr. Comput. Energ. Electron. Commun. Eng. 8(8), 1232–1237 (2014)
Salehi, H., Tolabinejad, H.: First-principles study of the optical properties of SrHfO3. Opt. Photonics J. 1(02), 75–80 (2011)CrossRef
Saroka, V.A., Batrakov, K.G.: Zigzag-shaped superlattices on the basis of graphene nanoribbons: structure and electronic properties. Russ. Phys. J. 59(5), 633–639 (2016)CrossRef
Saroka, V.A., Batrakov, K.G., Chernozatonskii, L.A.: Edge-modified zigzag-shaped graphene nanoribbons: structure and electronic properties. Phys. Solid State 56(10), 2135–2145 (2014)CrossRef
Saroka, V.A., et al.: Band gaps in jagged and straight graphene nanoribbons tunable by an external electric field. J. Phys. Condens. Matter 27(14), 145305–145317 (2015)ADSCrossRef
Schedin, F., Geim, A.K., Morozov, S.V., Hill, E.W., Blake, P., Katsnelson, M.I., Novoselov, K.S.: Detection of individual gas molecules adsorbed on graphene. Nat. Mater. 6(9), 652–655 (2007)ADSCrossRef
Semenoff, G.W.: Condensed-matter simulation of a three-dimensional anomaly. Phys. Rev. Lett. 53(26), 2449–2452 (1984)ADSCrossRef
SEMICONDUCTOR, Virginia: General Properties of Si, Ge, SiGe, SiO2 and Si3N4, vol. 10, pp. 2012–2017 (2012). Accessed March 2012
Shahrokhi, M., Leonard, C.: Tuning the band gap and optical spectra of silicon-doped graphene: many-body effects and excitonic states. J. Alloys Compd 693, 1185–1196 (2017)CrossRef
Singh, D.J.: Plane Waves, Pseudopotential and the LAPW Method. Kluwer Academic Publishers, Boston, Dordrecht (1994)
Son, Y.W., Cohen, M.L., Louie, S.G.: Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97(21), 216803–216807 (2006)ADSCrossRef
Tombros, N., Jozsa, C., Popinciuc, M., Jonkman, H.T., Van Wees, B.J.: Electronic spin transport and spin precession in single graphene layers at room temperature. Nature 448(7153), 571–574 (2007)ADSCrossRef
Tsetseris, L., Wang, B., Pantelides, S.T.: Substitutional doping of graphene: the role of carbon divacancies. Phys. Rev. B 89(3), 035411–035415 (2014)ADSCrossRef
Uchoa, B., Neto, A.C.: Superconducting states of pure and doped graphene. Phys. Rev. Lett. 98(14), 146801–146805 (2007)ADSCrossRef
Virot, L.: Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse. Doctoral dissertation, Université Paris Sud-Paris XI (2014)
Wagner, P., Ewels, C.P., Ivanovskaya, V.V., Briddon, P.R., Pateau, A., Humbert, B.: Ripple edge engineering of graphene nanoribbons. Phys. Rev. B 84(13), 134110–134117 (2011)ADSCrossRef
Wehling, T.O., Novoselov, K.S., Morozov, S.V., Vdovin, E.E., Katsnelson, M.I., Geim, A.K., Lichtenstein, A.I.: Molecular doping of graphene. Nano Lett. 8(1), 173–177 (2008)ADSCrossRef
Wu, X., Zeng, X.C.: Sawtooth-like graphene nanoribbon. Nano Res. 1(1), 40–45 (2008)CrossRef
Yoo, E., Kim, J., Hosono, E., Zhou, H.S., Kudo, T., Honma, I.: Large reversible Li storage of graphene nanosheet families for use in rechargeable lithium ion batteries. Nano Lett. 8(8), 2277–2282 (2008)ADSCrossRef
Zhang, S.J., Lin, S.S., Li, X.Q., Liu, X.Y., Wu, H.A., Xu, W.L., et al.: Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells. Nanoscale 8(1), 226–232 (2016)ADSCrossRef
Metadaten
Titel
Electronic optical, properties and widening band gap of graphene with Ge doping
verfasst von
M. L. Ould Ne
A. Abbassi
A. G. El hachimi
A. Benyoussef
H. Ez-Zahraouy
A. El Kenz
Publikationsdatum
01.06.2017
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 6/2017
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-017-1024-5

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