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2011 | OriginalPaper | Buchkapitel

4. Electronic Properties

verfasst von : Keiji Tanaka, Koichi Shimakawa

Erschienen in: Amorphous Chalcogenide Semiconductors and Related Materials

Verlag: Springer New York

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Abstract

Electronic density of states in the extended and localized states govern optical and electrical properties. We see, in this chapter, that studies on electronic properties have yielded a lot of valuable ideas, such as Tauc gap, mobility edge, and charged defects. In addition, concepts originally proposed for crystals such as polaron and Urbach edge bear special importance in chalcogenide glasses. We also consider optical nonlinearity, which is prominent in the chalcogenide glass. Electrical conduction mechanisms, under dc and ac electric fields, are also discussed. It is suggested that the Meyer–Neldel law is important to obtain full understanding of the transport mechanisms. The final section refers to composition dependence of the bandgap energy.

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Vorheriges Kapitel Structural Properties

Nächstes Kapitel Photo-Electronic Properties

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²A slightly different expression was given later. See Saitoh and Tanaka (2011).

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Titel: Electronic Properties
verfasst von: Keiji Tanaka
Koichi Shimakawa
Verlag: Springer New York
Buch: Amorphous Chalcogenide Semiconductors and Related Materials
Print ISBN: 978-1-4419-9509-4

Electronic ISBN: 978-1-4419-9510-0

Copyright-Jahr: 2011
DOI: https://doi.org/10.1007/978-1-4419-9510-0_4

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