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Journal of Materials Science: Materials in Electronics

Erschienen in:

03.07.2019

Electronic structure and structural defects in 3d-metal doped In₂O₃

verfasst von: J. Ho, J. Becker, B. Leedahl, D. W. Boukhvalov, I. S. Zhidkov, A. I. Kukharenko, E. Z. Kurmaev, S. O. Cholakh, N. V. Gavrilov, V. I. Brinzari, A. Moewes

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2019

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Abstract

Dilute magnetic semiconductors (DMSs) are a highly attractive field of research due to their potential to open new technological functionality. Here, we perform a systematic study of In₂O₃ thin films with dopant ions of Mn, Co, Ni, and Fe to investigate the unique interaction of each of these ions and their incorporation into the semiconductor lattice. We report substitutional positioning of Fe atoms into the In³⁺ site and a mixture of interstitial, metallic clustering, and substitutional positioning for Co, Mn, and Ni, discriminating between oxidation states for all dopant atoms.

Vorheriger Artikel Characterization of Ce-doped RE3Al5O12 (RE=Tb, Dy, Ho, Er, Tm and Yb) single crystalline scintillators

Nächster Artikel Structural, dielectric and electrocaloric properties of (Ba0.85Ca0.15)(Ti0.9Zr0.1−xSnx)O3 ceramics elaborated by sol–gel method

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Titel: Electronic structure and structural defects in 3d-metal doped In2O3
verfasst von: J. Ho
J. Becker
B. Leedahl
D. W. Boukhvalov
I. S. Zhidkov
A. I. Kukharenko
E. Z. Kurmaev
S. O. Cholakh
N. V. Gavrilov
V. I. Brinzari
A. Moewes
Publikationsdatum: 03.07.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 15/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01775-2

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