4. Embedded STT-MRAM: Device and Design

Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) is made of a combination of semiconductor integrated circuits (IC) and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). This emerging memory is of growing technological interest due to its potential to bring disruptive device innovation to the world of electronics. STT-MRAM is capable of providing high speed, unlimited endurance, and nonvolatility simultaneously, which is often recognized as a unique advantage over conventional and other emerging memories. While the technology is at an early stage and evolving in multiple platforms, STT-MRAM is particularly compelling as an embedded memory for system-on-chip (SOC). STT-MRAM can be integrated into SOC without altering baseline logic platforms both in process and in design. This chapter overviews key device and circuit subjects from the perspective of co-designing logic and MTJ.