A Frequency Doubler Utilizing Functionally Integrated Technique Based on a Symbolically Defined Model of GaN Schottky Barrier Diode

The article delves into the advancements in terahertz (THz) technology, focusing on the development of a frequency doubler utilizing a functionally integrated technique based on a symbolically defined model (SDM) of GaN Schottky Barrier Diode (SBD). The study highlights the superior performance of GaN-based frequency doublers over traditional GaAs-based designs, particularly in terms of power capacity and breakdown voltage. The proposed functionally integrated technique addresses the challenges of conventional topologies, such as impedance matching and circuit losses, by integrating multiple circuit functions into a single, compact structure. This approach not only reduces the complexity of the circuit design but also enhances overall performance. The SDM of GaN SBD is constructed to provide a more accurate representation of the diode's characteristics, enabling precise frequency doubler design. The article presents the design, fabrication, and measurement of a GaN-based frequency doubler, demonstrating its potential for high-power terahertz applications. The measured results show significant output power and conversion efficiency, validating the effectiveness of the proposed technique and model. The article concludes by discussing the implications of these advancements for the development of miniaturized and high-power terahertz front-end systems.