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6. A New Perspective on Growth of GaN from the Basic Ammonothermal Regime

  • 2021
  • OriginalPaper
  • Chapter
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Abstract

The chapter delves into the ammonothermal growth of GaN, particularly focusing on the basic ammonobasic regime. It introduces a new chemical model that considers the transport of intermediate species and the role of mineralizers. The authors discuss the potential existence of a liquid phase during the growth process, which could significantly impact the growth rates and quality of GaN crystals. The chapter also highlights the challenges and opportunities in controlling the growth process, suggesting new avenues for research and development in the field of semiconductor crystal growth.

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Title
A New Perspective on Growth of GaN from the Basic Ammonothermal Regime
Authors
Elke Meissner
Dietmar Jockel
Martina Koch
Rainer Niewa
Copyright Year
2021
DOI
https://doi.org/10.1007/978-3-030-56305-9_6
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