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Journal of Computational Electronics

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03-06-2024

A new stacked gate oxide L-shaped tunnel field effect transistor

Authors: Kaveh Eyvazi, Hamid Reza Yaghoubi, Mohammad Azim Karami

Published in: Journal of Computational Electronics | Issue 4/2024

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Abstract

In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO₂ dielectrics. The high-k dielectric, specifically, contributes to a robust electric field at the source/channel junction. This augmented electric field results in more energy band bending and a thinner tunneling barrier. As a result, the proposed device shows the drain current of 0.224 mA/μm, OFF-current of 1.3 × 10^–17 A/μm, threshold voltage of 0.62 V and average subthreshold swing of 34 mV/decade, in comparison with the conventional LTFET. Moreover, this paper demonstrates the role of both Shockley–Read–Hall generation and trap assisted tunneling in the subthreshold swing degradation due to the existence of trap inside the silicon band gap.

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Seabaugh, B.A.C., Zhang, Q.: Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010)CrossRef

Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329–337 (2011). https://doi.org/10.1038/nature10679CrossRef

Ram, M.K., Tiwari, N., Abdi, D.B., Saurabh, S.: Drain induced barrier widening and reverse short channel effects in tunneling FETs: investigation and analysis. IEEE Access. 9, 150366–150372 (2021). https://doi.org/10.1109/ACCESS.2021.3125856CrossRef

Liu, L., Mohata, D., Datta, S.: Scaling length theory of double-gate interband tunnel field-effect transistors. IEEE Trans. Electron Devices 59, 902–908 (2012)CrossRef

Sinha, S.K., Chaudhury, S.: Impact of oxide thickness on gate capacitance—a comprehensive analysis on MOSFET, nanowire FET, and CNTFET devices. IEEE Trans. Nanotechnol. 12(6), 958 (2013)CrossRef

Chander, S., Sinha, S.K., Chaudhary, R.: Comprehensive review on electrical noise analysis of TFET structures. Superlattices Microstruct. 161, 107101 (2021)CrossRef

Yaghobi, H.R., Eyvazi, K., Karami, M.A.: Investigation of single-event-transient effects on n⁺ pocket double-gate tunnel FET. Radiat. Phys. Chem. 212, 111094 (2023)CrossRef

Boucart, K., Ionescu, A.M.: Double-gate tunnel FET with High-k gate dielectric. IEEE Trans. Electron Devices 54, 1725–1733 (2007). https://doi.org/10.1109/TED.2007.899389CrossRef

Najam, F., Yu, Y.S.: Optimization of line-tunneling type l-shaped tunnel field-effect-transistor for steep subthreshold slope. Electron. 7, 2–11 (2018). https://doi.org/10.3390/electronics7110275CrossRef

10.

Abraham, N., James, R.K.: An improved tunnel field—effect transistor with an L-shaped gate and channel. J. Comput. Electron. (2020). https://doi.org/10.1007/s10825-020-01450-4CrossRef

11.

Chander, S., Sinha, S.K., Chaudhary, R., Singh, A.: Ge-source based L-shaped tunnel field effect transistor for low power switching application. Silicon (2021). https://doi.org/10.1007/s12633-021-01475-9CrossRef

12.

Eyvazi, K., Karami, M.A.: Suppressing ambipolar Current in UTFET by auxiliary gate. Iran. J. Sci. Technol. Trans. Electr. Eng. 45, 407–414 (2020). https://doi.org/10.1007/s40998-020-00377-7CrossRef

13.

Singh, S., Raj, B.: Two-dimensional analytical modeling of the surface potential and drain current of a double—gate vertical t-shaped tunnel field-effect transistor. J. Comput. Electron. (2020). https://doi.org/10.1007/s10825-020-01496-4CrossRef

14.

Imenabadi, R.M., Saremi, M., Vandenberghe, W.G.: A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance. IEEE Trans. Electron Devices 64, 4752–4758 (2017)CrossRef

15.

Vanlalawpuia, K., Bhowmick, B.: Investigation of a Ge-source vertical TFET with delta-doped layer. IEEE Trans. Electron Devices 66, 4439–4445 (2019). https://doi.org/10.1109/TED.2019.2933313CrossRef

16.

Cao, W., Yao, C.J., Jiao, G.F., Huang, D., Yu, H.Y., Li, M.: Improvement in reliability of tunneling field-effect transistor with p-n-i-n structure. IEEE Trans. Electron Devices 58(7), 2122 (2011). https://doi.org/10.1109/TED.2011.2144987CrossRef

17.

Sahoo, S., Dash, S., Routray, S.R., Mishra, G.P.: Z-shaped gate TFET with horizontal pocket for improvement of electrostatic behavior. Int. J. Numer. Model. Electron. Networks Devices Fields 34, 1–10 (2021). https://doi.org/10.1002/jnm.2808CrossRef

18.

Goswami, Y., Asthana, P., Basak, S.: Junctionless tunnel field effect transistor with nonuniform doping. Int. J. Nanosci. 14, 1–7 (2015). https://doi.org/10.1142/S0219581X14500252CrossRef

19.

Vimala, P., Samuel, T.S.A., Nirmal, D., Panda, A.K.: Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric. Solid State Electron. Lett. 1, 64–72 (2019). https://doi.org/10.1016/j.ssel.2019.10.001CrossRef

20.

Eyvazi, K., Karami, M.A.: A new junction-less tunnel field-effect transistor with a SiO₂/HfO₂ stacked gate oxide for dc performance improvement. 2020 28th Iran. Conf. Electr. Eng. ICEE 2020. 20–23 (2020). https://doi.org/10.1109/ICEE50131.2020.9260621

21.

Patel, J., Sharma, D., Yadav, S., Lemtur, A., Suman, P.: Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level. Microelectronics J. 85, 72–82 (2019). https://doi.org/10.1016/j.mejo.2019.02.004CrossRef

22.

Kumar, S., Sucheta, K., Kaushal, S., Vinay, N., Tikkiwal, A., Venkata, B.: Dual-material dual-oxide double-gate TFET for improvement in DC characteristics, analog/RF and linearity performance. Appl. Phys. A (2019). https://doi.org/10.1007/s00339-019-2650-5CrossRef

23.

Abadi, R.M.I., Ziabari, S.A.S.: Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications. Microelectron. Eng. 162, 12–16 (2016). https://doi.org/10.1016/j.mee.2016.04.016CrossRef

24.

Choi, W.Y., Lee, H.K.: Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). Nano Converg. 3, 1–15 (2016). https://doi.org/10.1186/s40580-016-0073-yCrossRef

25.

Caymax, M., Houssa, M., Pourtois, G., Bellenger, F., Martens, K., Delabie, A., Elshocht, S.V.: Interface control of high-k gate dielectrics on Ge. Appl. Surface Sci. 254, 6094–6099 (2008). https://doi.org/10.1016/j.apsusc.2008.02.134CrossRef

26.

Dash, D.K., Saha, P., Mahajan, A., Kumari, T., Sarkar, S.K.: 3D analytical modeling and electrical characteristics analysis of gate-engineered SiO₂/HfO₂-stacked tri-gate TFET. Indian J. Phys. 94, 219–232 (2020). https://doi.org/10.1007/s12648-019-01446-2CrossRef

27.

Horst, F., Farokhnejad, A., Iniguez, B., Kloes, A.: Closed-form modeling approach of trap-assisted tunneling current for use in compact TFET models. Proc. 26th Int. Conf. Mixed Des. Integr. Circuits Syst. Mix. 2019. 81–86 (2019). https://doi.org/10.23919/MIXDES.2019.8787095

28.

Omura, Y., Mori, Y., Sato, S., Mallik, A.: Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors. J. Appl. Phys. (2018). https://doi.org/10.1063/1.5010036CrossRef

29.

Najam, F., Yu, Y.S.: Compact trap-assisted-tunneling model for line tunneling field-effect-transistor devices. Appl. Sci. 10, 4475 (2020). https://doi.org/10.3390/app10134475CrossRef

30.

Kim, S.W., Choi, W.Y., Sun, M.C., Park, B.G.: Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method. J. Nanosci. Nanotechnol. 13, 6376–6381 (2013). https://doi.org/10.1166/jnn.2013.7609CrossRef

31.

Li, C., Yan, Z.R., Zhuang, Y.Q., Zhao, X.L., Guo, J.M.: Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chinese Phys. B. 27, 078502 (2018). https://doi.org/10.1088/1674-1056/27/7/078502CrossRef

32.

Najam, F., Yu, Y.S.: Investigation of corner effect and identification of tunneling regimes in L-shaped tunnel field-effect-transistor. J. Nanosci. Nanotechnol. 18, 6575–6583 (2018). https://doi.org/10.1166/jnn.2018.15703CrossRef

33.

Yasuda, T.: Low-temperature formation of device-quality SiO₂/Si interfaces by a two-step remote plasma-assisted oxidation/deposition process. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 10, 1844 (1992). https://doi.org/10.1116/1.586210CrossRef

34.

Lee, D.R., Lucovsky, G., Denker, M.S., Magee, C.: Nitrogen-atom incorporation at Si–SiO₂ interfaces by a low-temperature (300 °C), pre-deposition, remote-plasma oxidation using N₂O. J. Vac. Sci Technol. A Vacuum Surfaces Film. 13, 1671–1675 (1995). https://doi.org/10.1116/1.579749CrossRef

35.

Niimi, H., Lucovsky, G.: Monolayer-level controlled incorporation of nitrogen at Si–SiO₂ interfaces using remote plasma processing. J. Vac. Sci Technol. A Vacuum Surfaces Film. 17, 3185–3196 (1999). https://doi.org/10.1116/1.582041CrossRef

36.

Hinkle, C.L., Fulton, C., Nemanich, R.J., Lucovsky, G.: A novel approach for determining the effective tunneling mass of electrons in HfO₂ and other high-K alternative gate dielectrics for advanced CMOS devices. Microelectron. Eng. 72, 257–262 (2004). https://doi.org/10.1016/j.mee.2003.12.047CrossRef

37.

DS Software.: ATLAS user’s manual device simulation software volume I. I 318 (1998)

38.

Najam, F., Yu, Y.S.: Impact of quantum confinement on band-to-band tunneling of line-tunneling type l-shaped tunnel field-effect transistor. IEEE Trans. Electron Devices 66, 2010–2016 (2019). https://doi.org/10.1109/TED.2019.2898403CrossRef

39.

Najam, F., Kim, S., Choi, W.Y., Yu, Y.S.: Physically consistent method for calculating trap-assisted-tunneling current applied to line tunneling field-effect transistor. IEEE Trans. Electron Devices 67, 2106–2112 (2020). https://doi.org/10.1109/TED.2020.2982262CrossRef

40.

Najam, F., Seop, Y.: Role of quantum confinement effect on tunneling operation of LTFET devices. Proceedings of the Korean institute of information and commucation sciences conference. The Korea institute of information and commucation engineering. pp. 241–242 (2017)

41.

Pandey, C.K., Dash, D., Chaudhury, S.: Improvement in analog/RF performances of SOI TFET using dielectric pocket. Int. J. Electron. 107, 1844–1860 (2020). https://doi.org/10.1080/00207217.2020.1756439CrossRef

42.

Mamidala, J. K., Vishnoi, R., Pandey, P.: Tunnel field-effect transistors (TFET) modelling and simulation. John Wiley & Sons. (2016)

43.

Dash, S., Mishra, G.P.: A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET). Superlattices Microstruct. 86, 211–220 (2015). https://doi.org/10.1016/j.spmi.2015.07.049CrossRef

44.

Chander, S., Chaudhary, R., Sinha, S.K.: Electrical noise analysis of l-shaped gate tunnel field effect transistor. IEEE VLSI Device Circuit Syst. (2022). https://doi.org/10.1109/VLSIDCS53788.2022.9811457CrossRef

45.

Xie, H., Liu, H., Han, T., Li, W., Chen, S., Wang, S.: TCAD simulation of a double L-shaped gate tunnel field-effect transistor with a covered source—channel. Micro Nano Lett. 15, 272–276 (2020). https://doi.org/10.1049/mnl.2019.0398CrossRef

46.

Chong, C., Liu, H., Wang, S., Chen, S., Xie, H.: Sensitivity analysis of biosensors based on a dielectric-modulated l-shaped gate field-effect transistor. Micromachines 12, 1–10 (2021). https://doi.org/10.3390/mi12010019CrossRef

47.

Sajjad, R.N., Chern, W., Hoyt, J.L., Antoniadis, D.A.: Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs. IEEE Trans. Electron Devices 63, 4380–4387 (2016). https://doi.org/10.1109/TED.2016.2603468CrossRef

48.

Xiao, T.P., Zhao, X., Agarwal, S., Yablonovitch, E.: Impact of interface defects on tunneling FET turn-on steepness. 2015 4th Berkeley Symp. Energy Effic. Electron. Syst. E3S 2015 - Proc. 2–3 (2015). https://doi.org/10.1109/E3S.2015.7336796

49.

Xu, Y., Xiang, P., Xie, X., Huang, Y.: A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. Semicond. Sci. Technol. 31, 1–9 (2016). https://doi.org/10.1088/0268-1242/31/6/065024CrossRef

50.

Kindt, W.J., Van Zeijl, H.W.: Modelling and fabrication of geiger mode avalanche photodiodes. IEEE Trans. Nucl. Sci. 45, 715–719 (1998). https://doi.org/10.1109/23.682621CrossRef

51.

Hurkx, G.A.M., De Graaff, H.C., Kloosterman, W.J., Knuvers, M.P.G.: A new analytical diode model including tunneling and avalanche breakdown. IEEE Trans. Electron Devices 39, 2090–2098 (1992). https://doi.org/10.1109/16.155882CrossRef

52.

Webster, E.A.G., Nicol, R.L., Grant, L., Renshaw, D.: Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors. IEEE Trans. Electron Devices 57, 2176–2182 (2010). https://doi.org/10.1109/TED.2010.2052399CrossRef

53.

Panglosse, A., Martin-Gonthier, P., Marcelot, O., Virmontois, C., Saint-Pe, O., Magnan, P.: Dark count rate modeling in single-photon avalanche diodes. IEEE Trans. Circuits Syst. I Regul. Pap. 67, 1507–1515 (2020). https://doi.org/10.1109/TCSI.2020.2971108CrossRef

54.

De Michielis, L., Iellina, M., Palestri, P., Ionescu, A. M., Selmi, L.: Tunneling path impact on semi-classical numerical simulations of TFET devices. In Ulis 2011 Ultimate Integration on Silicon (pp. 1–4). IEEE. (2011)

55.

Kim, S.W., Kim, J.H., Member, S., Liu, T.K., Choi, W.Y., Park, B., An, A., Fet, L.: Demonstration of L-Shaped tunnel field-effect transistors. IEEE Trans. Electron Devices 63(4), 1774–1778 (2015)CrossRef

56.

Kane, E.O.: Theory of tunneling. J. Appl. Phys. 32, 83 (1961). https://doi.org/10.1063/1.1735965MathSciNetCrossRef

57.

Ananda, A., Chauhan, S.S., Prakash, A.: Comment on “an analytical model for tunnel barrier modulation in triple metal double gate TFET.” IEEE Trans. Electron Devices 66, 1123–1124 (2019). https://doi.org/10.1109/TED.2018.2882524CrossRef

58.

Fets, T.: A 2-D analytical model for double-gate tunnel FETs. IEEE Trans. Electron Devices 61, 1494–1500 (2014)CrossRef

Title: A new stacked gate oxide L-shaped tunnel field effect transistor
Authors: Kaveh Eyvazi
Hamid Reza Yaghoubi
Mohammad Azim Karami
Publication date: 03-06-2024
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 4/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-024-02183-4

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A new stacked gate oxide L-shaped tunnel field effect transistor

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