A Novel Dual Metal Double Gate Grooved Trench MOS Transistor: Proposal and Investigation

Through this paper, we have propounded and investigated a novel structure of a grooved trench MOS transistor with double gate architecture using TCAD simulations. To date, only a single metal trench MOSFET has been reported which having weaker control of the gate bias over the channel charge, unlike improved in our propounded structure. The propounded dual metal double gate grooved trench (DMDGGT) structure incorporated the advantages of enhanced gate controllability and subdued the drain-induced barrier lowering (DIBL) owing to the presence of a bi-metal gate with dissimilar work functions. In addition, due to the inherent advantage of a grooved trench gate device of having a longer effective channel length by the trench gate geometry, the device results in a significant reduction in short-channel effects (SCEs). The acquired results from the SILVACO ATLAS simulation exhibit a significant improvement of the propounded DMDGGT MOSFET as compared to its single metal counterpart for surface potential, electric field, threshold voltage, and drain characteristics, thereby substantiating the efficacy of the propounded device structure.