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Published in:

20-07-2016

A novel method for the deposition of polycrystalline Sb2S3 thin films

Authors: P. A. Chate, D. J. Sathe, S. D. Lakde, V. D. Bhabad

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2016

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Abstract

Antimony sulphide (Sb2S3) semiconductor thin films are synthesized by dip technique. The film thickness is of the order of 0.62 µm. Films are found to be uniform and well adherent to the glass substrates. Characterization of the films is carried out with XRD, optical absorption, morphological, compositional and electrical measurement. X-ray diffraction pattern showed that the films were polycrystalline in nature. From optical absorption spectra the band gap is estimated to be 2.10 eV. The electrical conduction is of the order of 10−7(Ω cm)−1.

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Metadata
Title
A novel method for the deposition of polycrystalline Sb2S3 thin films
Authors
P. A. Chate
D. J. Sathe
S. D. Lakde
V. D. Bhabad
Publication date
20-07-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5391-7