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Published in:
2007 | OriginalPaper | Chapter
A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach
Authors : Ximeng Guan, Yaohua Tan, Jing Lu, Lilin Tian, Yan Wang, Zhiping Yu
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
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The electrostatics of InSb double-gate MOSFETs is simulated using a self-consistent solver which calculates channel bandstructure and carrier population by tight-binding (TB) approach. The
Q-V
g
characteristic and the Quantum Confinement Stark Effect (QCSE) are evaluated. By comparing with the results from the
k · p
method and effective mass approach, we show that full-band approach based on TB becomes more desirable when the channel is scaled down to a low dimensional quantum well. As the consequence of narrow channel width it is observed that the density of states (DOS) near band edges is decreased.