Top

Journal of Computational Electronics

Published in:

10-09-2024

A simulation study of electrostatically doped silicene and graphene nanoribbon FETs

Authors: Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad

Published in: Journal of Computational Electronics | Issue 6/2024

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the I_ON/I_OFF ratio to 3.8 × 10⁵ in SiNR-FET compared to 3.9 × 10³ in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g_m) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.

previous article Conductance characteristics of naphthopyran as a light-sensitive molecular optical junction: a joint NEGF-DFT and TD-DFT study

next article Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Cao, W., Jiang, J., Xie, X., Pal, A., Chu, J.H., Kang, J., Banerjee, K.: 2-D layered materials for next-generation electronics: opportunities and challenges. IEEE Trans. Electron Devices 65(10), 4109–4121 (2018). https://doi.org/10.1109/TED.2018.2867441CrossRef

Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Von Molnár, V.S., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M.: Spintronics: a spin-based electronics vision for the future. Science 294(5546), 1488–1495 (2001). https://doi.org/10.1126/science.1065389CrossRef

Iijima, S.: Helical microtubules of graphitic carbon. Nature 354(6348), 56–58 (1991). https://doi.org/10.1038/354056a0CrossRef

Banadaki, Y.M., Srivastava, A.: Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model. Solid-State Electron. 1(111), 80–90 (2015). https://doi.org/10.1016/j.sse.2015.05.003CrossRef

Banadaki, Y.M., Srivastava, A.: Scaling effects on static metrics and switching attributes of graphene nanoribbon FET for emerging technology. IEEE Trans. Emerg. Top. Comput. 3(4), 458–469 (2015). https://doi.org/10.1109/TETC.2015.2445104CrossRef

Banadaki, Y., Sharifi, S.: Graphene nanostructures: modeling, simulation, and applications in electronics and photonics. Jenny Stanford Publishing (2019)

Bayani, A.H., Dideban, D., Vali, M., Moezi, N.: Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects. Semicond. Sci. Technol. 31(4), 045009 (2016). https://doi.org/10.1088/0268-1242/31/4/045009CrossRef

Zhuang, J., Xu, X., Feng, H., Li, Z., Wang, X., Du, Y.: Honeycomb silicon: a review of silicene. Sci. Bulletin. 60, 1551–1562 (2015). https://doi.org/10.1007/s11434-015-0880-2CrossRef

Mahmoudi, M., Ahangari, Z., Fathipour, M.: Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap. Chin. Phys. B 25(1), 018501 (2015). https://doi.org/10.1088/1674-1056/25/1/018501CrossRef

10.

Gupta, G., Rajasekharan, B., Hueting, R.J.: Electrostatic doping in semiconductor devices. IEEE Trans. Electron Devices 64(8), 3044–3055 (2017). https://doi.org/10.1109/TED.2017.2712761CrossRef

11.

Robbins, M.C., Koester, S.J.: Black phosphorus p-and n-MOSFETs with electrostatically doped contacts. IEEE Electron Device Lett. 38(2), 285–288 (2016). https://doi.org/10.1109/LED.2016.2638818CrossRef

12.

Hammam, A.M., Schmidt, M.E., Muruganathan, M., Suzuki, S., Mizuta, H.: Sub-10 nm graphene nano-ribbon tunnel field-effect transistor. Carbon 1(126), 588–593 (2018). https://doi.org/10.1016/j.carbon.2017.09.091CrossRef

13.

Zhang, W., Ragab, T., Basaran, C.: Electrostatic doping-based All GNR tunnel FET: an energy-efficient design for power electronics. IEEE Trans. Electron Devices 66(4), 1971–1978 (2019). https://doi.org/10.1109/TED.2019.2896315CrossRef

14.

Gooran-Shoorakchaly, A., Ahmadchally, A.A., Soleimani-Amiri, S., Gholipour, M.: Design of a low-power short-channel electrostatically doped silicene nanoribbon FET. IEEE Trans. Electron Devices 68(4), 1956–1961 (2021). https://doi.org/10.1109/TED.2021.3058337CrossRef

15.

Srivastava, A., Banadaki, Y.M., Fahad, M.S.: Dielectrics for graphene transistors for emerging integrated circuits. ECS Trans. 61(2), 351 (2014). https://doi.org/10.1149/06102.0351ecstCrossRef

16.

Knoch, J., Riess, W., Appenzeller, J.: Outperforming the conventional scaling rules in the quantum-capacitance limit. IEEE Electron Device Lett. 29(4), 372–374 (2008). https://doi.org/10.1109/LED.2008.917816CrossRef

17.

Wang, L., Meric, I., Huang, P.Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L.M., Muller, D.A., Guo, J.: One-dimensional electrical contact to a two-dimensional material. Science 342(6158), 614–617 (2013). https://doi.org/10.1126/science.1244358CrossRef

18.

Fiori, G., Iannaccone, G.: Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling. J. Comput. Electron. 4, 63–66 (2005). https://doi.org/10.1007/s10825-005-7108-7CrossRef

19.

Son, Y.W., Cohen, M.L., Louie, S.G.: Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97(21), 216803 (2006). https://doi.org/10.1103/PhysRevLett.97.216803CrossRef

20.

Zaminpayma, E., Nayebi, P.: Band gap engineering in silicene: a theoretical study of density functional tight-binding theory. Phys. E 1(84), 555–563 (2016). https://doi.org/10.1016/J.PHYSE.2016.06.016CrossRef

21.

Aghaei, S.M., Monshi, M.M., Torres, I., Calizo, I.: Edge functionalization and doping effects on the stability, electronic and magnetic properties of silicene nanoribbons. RSC Adv. 6(21), 17046–17058 (2016). https://doi.org/10.1039/C5RA26107DCrossRef

22.

Grassi, R., Poli, S., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.: Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs. Solid-State Electron. 53(4), 462–467 (2009). https://doi.org/10.1016/j.sse.2008.07.015CrossRef

23.

Lake, R., Klimeck, G., Bowen, R.C., Jovanovic, D.: Single and multiband modeling of quantum electron transport through layered semiconductor devices. J. Appl. Phys. 81(12), 7845–7869 (1997). https://doi.org/10.1063/1.365394CrossRef

24.

Datta, S.: Nanoscale device modeling: the Green’s function method. Superlattices Microstruct. 28(4), 253–278 (2000). https://doi.org/10.1006/spmi.2000.0920CrossRef

25.

Conzatti, F., Pala, M.G., Esseni, D., Bano, E., Selmi, L.: Strain-induced performance improvements in InAs nanowire tunnel FETs. IEEE Trans. Electron Devices 59(8), 2085–2092 (2012). https://doi.org/10.1109/TED.2012.2200253CrossRef

26.

Wang, X., Dai, H.: Etching and narrowing of graphene from the edges. Nat. Chem. 2(8), 661–665 (2010). https://doi.org/10.1038/nchem.719CrossRef

27.

Li, X., Wang, X., Zhang, L., Lee, S., Dai, H.: Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319(5867), 1229–1232 (2008). https://doi.org/10.1126/science.1150878CrossRef

28.

Fang, D.Q., Zhang, Y., Zhang, S.L.: Silicane nanoribbons: electronic structure and electric field modulation. New J. Phys. 16(11), 115006 (2014). https://doi.org/10.1088/1367-2630/16/11/115006CrossRef

29.

Knoch, J., Appenzeller, J.: Tunneling phenomena in carbon nanotube field-effect transistors. Phys. Status solidi (a). 205(4), 679–694 (2008). https://doi.org/10.1002/pssa.200723528CrossRef

30.

Balachandran, A.P., Reyes-Lega, A.F.: The gauss law: a tale. classical and quantum physics: 60 years Alberto Ibort fest geometry. Dyn. Control. 26, 41–55 (2019). https://doi.org/10.1007/978-3-030-24748-5CrossRef

31.

Tamersit, K.: Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance. AEU-Int. J. Electron. Commun. 1(124), 153354 (2020). https://doi.org/10.1016/j.aeue.2020.153354CrossRef

32.

Singh, N.K., Sahoo, M.: Investigation on the effect of gate dielectric and other device parameters on digital performance of silicene nanoribbon tunnel FET. IEEE Trans. Electron Devices 67(7), 2966–2973 (2020). https://doi.org/10.1109/TED.2020.2992016CrossRef

33.

Bayani, A.H., Dideban, D., Moezi, N.: Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor. Superlattices Microstruct. 1(100), 198–208 (2016). https://doi.org/10.1016/j.spmi.2016.09.021CrossRef

34.

Chuan, M.W., Riyadi, M.A., Hamzah, A., Alias, N.E., Sultan, S.M., Lim, C.S., Tan, M.L.: Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors. Results Phys. 1(29), 104714 (2021). https://doi.org/10.1016/j.rinp.2021.104714CrossRef

35.

Poljak, M.: Impact of width scaling and parasitic series resistance on the performance of silicene nanoribbon MOSFETs. IEEE Trans. Electron Devices 67(11), 4705–4708 (2020). https://doi.org/10.1109/TED.2020.3017465CrossRef

36.

Chuan, M.W., Wong, K.L., Hamzah, A., Rusli, S., Alias, N.E, Lim, C.S., Tan, M.L.: Device performance of silicene nanoribbon field-effect transistor under ballistic transport. In 2020 IEEE international conference on semiconductor electronics (ICSE) 2020 Jul 28 (pp. 5–8). IEEE. https://doi.org/10.1109/ICSE49846.2020.9166895

37.

Kharadi, M.A., Malik, G.F., Shah, K.A., Khanday, F.A.: Sub-10-nm silicene nanoribbon field effect transistor. IEEE Trans. Electron Devices 66(11), 4976–4981 (2019). https://doi.org/10.1109/TED.2019.2942396CrossRef

38.

Banadaki, Y.M.: Physical modeling of graphene nanoribbon field effect transistor using non-equilibrium green function approach for integrated circuit design. Louisiana State University and Agricultural & Mechanical College, (2016). https://doi.org/10.31390/gradschool_dissertations.1052

39.

Gooran Shoorakchaly, A., Sharif, S., Banad, Y.A.: Computational study of electrostatically-doped silicene and graphene nanoribbon FETs. Bulletin of the American Physical Society. 2024 Mar 4. https://meetings.aps.org/Meeting/MAR24/Session/CC06.10

Title: A simulation study of electrostatically doped silicene and graphene nanoribbon FETs
Authors: Armin Gooran-Shoorakchaly
Sarah Safura Sharif
Yaser Mike Banad
Publication date: 10-09-2024
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 6/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-024-02224-y

Springer Professional

A simulation study of electrostatically doped silicene and graphene nanoribbon FETs

Abstract

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Other articles of this Issue 6/2024

Conductance characteristics of naphthopyran as a light-sensitive molecular optical junction: a joint NEGF-DFT and TD-DFT study

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes

Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Conductance characteristics of naphthopyran as a light-sensitive molecular optical junction: a joint NEGF-DFT and TD-DFT study

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes

Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate