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Journal of Computational Electronics

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11-07-2023

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Authors: Adel M’foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala

Published in: Journal of Computational Electronics | Issue 5/2023

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Abstract

We present a first-principles model to study tunnel transistors based on van der Waals heterojunctions of 2D materials in the presence of dissipative mechanisms due to the electron–phonon interaction. To this purpose, we employed a reduced basis set composed of unit-cell restricted Bloch functions computed with a plane wave ab-initio solver and performed self-consistent quantum transport simulations within the non-equilibrium Green’s functions formalism. Phonon scattering was included with specific self-energies making use of the deformation potential approximation for the electron–phonon coupling. Our simulations identify the van der Waals tunnel FET as a promising option to attain high on-state currents at low supply voltages, but also show a strong impact of the phonon scattering on the transport properties of such device in the sub-threshold regime.

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Title: Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
Authors: Adel M’foukh
Jérôme Saint-Martin
Philippe Dollfus
Marco Pala
Publication date: 11-07-2023
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 5/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02080-2

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Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

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Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Comparative study of multi-physics generated small dipoles in conducting media

Resistance saturation in semi-conducting polyacetylene molecular wires

Research on high sensitivity fano resonance sensing based on MIM waveguide coupled with double Fibonacci spirals

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Electronic structure and optical and thermoelectric response of lead-free double perovskite BaMgLaBiO6: a first-principles study

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