Skip to main content
Top
Published in: Optical and Quantum Electronics 6/2015

01-06-2015

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

Author: Sergey Karpov

Published in: Optical and Quantum Electronics | Issue 6/2015

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The paper reviews applications of ABC-model to interpret internal quantum efficiency and its droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and tentative mechanisms responsible for deviation of the model predictions from available observations are discussed. New experimental information on recombination processes in the LED active regions coming in terms of the ABC-model is considered along with still open questions and tasks for further experimental and theoretical studies.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
go back to reference Bertazzi, F., Zhou, X., Goano, M., Ghione, G., Bellotti, E.: Auger recombination in InGaN/GaN quantum wells: a full-Brillouin-zone study. Appl. Phys. Lett. 103, 081106 (2012)CrossRefADS Bertazzi, F., Zhou, X., Goano, M., Ghione, G., Bellotti, E.: Auger recombination in InGaN/GaN quantum wells: a full-Brillouin-zone study. Appl. Phys. Lett. 103, 081106 (2012)CrossRefADS
go back to reference Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H.-J., Sabathil, M., Bougeard, D., Wagner, J., Galler, B.: Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Appl. Phys. Lett. 103, 071108 (2013) Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H.-J., Sabathil, M., Bougeard, D., Wagner, J., Galler, B.: Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Appl. Phys. Lett. 103, 071108 (2013)
go back to reference Bogdanov, M.V., Bulashevich, K.A., Khokhlev, O.V., Evstratov, I.Yu., Ramm, M.S., Karpov, S.Yu.: Current crowding effect on light extraction efficiency of thin-film LEDs. Phys. Stat. Solidi C 7, 2124–2126 (2010) Bogdanov, M.V., Bulashevich, K.A., Khokhlev, O.V., Evstratov, I.Yu., Ramm, M.S., Karpov, S.Yu.: Current crowding effect on light extraction efficiency of thin-film LEDs. Phys. Stat. Solidi C 7, 2124–2126 (2010)
go back to reference Bulashevich, K.A., Karpov, S.Yu.: Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? Phys. Stat. Solidi C 5, 2066–2069 (2008) Bulashevich, K.A., Karpov, S.Yu.: Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? Phys. Stat. Solidi C 5, 2066–2069 (2008)
go back to reference Bulashevich, K.A., Khokhlev, O.V., Evstratov, I.Yu., Karpov, S.: Simulation of light-emitting diodes for new physics understanding and device design. Proc. SPIE 8278, 827819 (2012) Bulashevich, K.A., Khokhlev, O.V., Evstratov, I.Yu., Karpov, S.: Simulation of light-emitting diodes for new physics understanding and device design. Proc. SPIE 8278, 827819 (2012)
go back to reference Chen, T.P., Yao, C.L., Wu, C.Y., Yeh, J.H., Wang, C.W., Hsieh, M.H.: Recent developments in high brightness LEDs. Proc. SPIE 6910, 691005 (2008) Chen, T.P., Yao, C.L., Wu, C.Y., Yeh, J.H., Wang, C.W., Hsieh, M.H.: Recent developments in high brightness LEDs. Proc. SPIE 6910, 691005 (2008)
go back to reference Chichibu, S.F., Uedono, A., Onuma, T., Haskell, B.A., Chakraborthy, A., Koyama, T., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., Sota, T.: Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors. Nature Mater. 5, 810–816 (2006)CrossRefADS Chichibu, S.F., Uedono, A., Onuma, T., Haskell, B.A., Chakraborthy, A., Koyama, T., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., Sota, T.: Origin of defect-insensitive emission probability in In-containing (Al, In, Ga)N alloy semiconductors. Nature Mater. 5, 810–816 (2006)CrossRefADS
go back to reference Dai, Q., Shan, Q., Wang, J., Chhajed, S., Cho, J., Schubert, E.F., Crawford, M.H., Koleske, D.D., Kim, M.-H., Park, Y.: Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes. Appl. Phys. Lett. 97, 133507 (2010)CrossRefADS Dai, Q., Shan, Q., Wang, J., Chhajed, S., Cho, J., Schubert, E.F., Crawford, M.H., Koleske, D.D., Kim, M.-H., Park, Y.: Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes. Appl. Phys. Lett. 97, 133507 (2010)CrossRefADS
go back to reference Dai, Q., Shan, Q., Cho, J., Schubert, E.F., Crawford, M.H., Koleske, D.D., Kim, M.-H., Park, Y.: On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. Appl. Phys. Lett. 98, 033506 (2011)CrossRefADS Dai, Q., Shan, Q., Cho, J., Schubert, E.F., Crawford, M.H., Koleske, D.D., Kim, M.-H., Park, Y.: On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms. Appl. Phys. Lett. 98, 033506 (2011)CrossRefADS
go back to reference David, A., Grundmann, M.J., Kaeding, J.F., Gardner, N.F., Mihopoulos, T.G., Krames, M.R.: Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 92, 053502 (2008)CrossRefADS David, A., Grundmann, M.J., Kaeding, J.F., Gardner, N.F., Mihopoulos, T.G., Krames, M.R.: Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 92, 053502 (2008)CrossRefADS
go back to reference David, A., Grundmann, M.J.: Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96, 103504 (2010a)CrossRefADS David, A., Grundmann, M.J.: Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96, 103504 (2010a)CrossRefADS
go back to reference David, A., Grundmann, M.J.: Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl. Phys. Lett. 97, 033501 (2010b)CrossRefADS David, A., Grundmann, M.J.: Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl. Phys. Lett. 97, 033501 (2010b)CrossRefADS
go back to reference Dyakonov, M.I., Kachorovskii, V.Yu.: Nonthreshold Auger recombination in quantum wells. Phys. Rev. B 49, 17130–17138 (1994) Dyakonov, M.I., Kachorovskii, V.Yu.: Nonthreshold Auger recombination in quantum wells. Phys. Rev. B 49, 17130–17138 (1994)
go back to reference Eliseev, P.G., Osin’ski, M., Li, H., Akimova, I.V.: Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells. Appl. Phys. Lett. 75, 3838–3840 (1999) Eliseev, P.G., Osin’ski, M., Li, H., Akimova, I.V.: Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells. Appl. Phys. Lett. 75, 3838–3840 (1999)
go back to reference Frost, T., Banerjee, A., Jahangir, S., Bhattacharya, P.: Temperature-dependent measurement of Auger recombination in In\(_{0.40}\)Ga\(_{0.60}\)N/GaN red-emitting (\(\lambda \) = 630 nm) quantum dots. Appl. Phys. Lett. 104, 081121 (2014) Frost, T., Banerjee, A., Jahangir, S., Bhattacharya, P.: Temperature-dependent measurement of Auger recombination in In\(_{0.40}\)Ga\(_{0.60}\)N/GaN red-emitting (\(\lambda \) = 630 nm) quantum dots. Appl. Phys. Lett. 104, 081121 (2014)
go back to reference Fudjiwara, K., Jimi, H., Kaneda, K.: Temperature-dependent droop of electroluminescence efficiency in blue (In, Ga)N quantum-well diodes. Phys. Stat. Solidi C 6, S814–S817 (2009)CrossRefADS Fudjiwara, K., Jimi, H., Kaneda, K.: Temperature-dependent droop of electroluminescence efficiency in blue (In, Ga)N quantum-well diodes. Phys. Stat. Solidi C 6, S814–S817 (2009)CrossRefADS
go back to reference Galeckas, A., Linnros, J., Grivickas, V., Lindefelt, U., Hallin, C.: Auger recombination in 4H-SiC: unusual temperature behavior. Appl. Phys. Lett. 71, 3269–3271 (1997)CrossRefADS Galeckas, A., Linnros, J., Grivickas, V., Lindefelt, U., Hallin, C.: Auger recombination in 4H-SiC: unusual temperature behavior. Appl. Phys. Lett. 71, 3269–3271 (1997)CrossRefADS
go back to reference Galler, B., Laubsch, A., Wojcik, A., Lugauer, H., Gomez-Iglesias, A., Sabathil, M., Hahn, B.: Investigation of the carrier distribution in InGaN-based multi-quantum-well structures. Phys. Stat. Solidi C 8, 2372–2374 (2011)CrossRef Galler, B., Laubsch, A., Wojcik, A., Lugauer, H., Gomez-Iglesias, A., Sabathil, M., Hahn, B.: Investigation of the carrier distribution in InGaN-based multi-quantum-well structures. Phys. Stat. Solidi C 8, 2372–2374 (2011)CrossRef
go back to reference Galler, B., Lugauer, H.-J., Binder, M., Hollweck, R., Folwill, Y., Nirschl, A., Gomez-Iglesias, A., Hahn, B., Wagner, J., Sabathil, M.: Experimental determination of the dominant type of Auger recombination in InGaN quantum wells. Appl. Phys. Express 6, 112101 (2013)CrossRefADS Galler, B., Lugauer, H.-J., Binder, M., Hollweck, R., Folwill, Y., Nirschl, A., Gomez-Iglesias, A., Hahn, B., Wagner, J., Sabathil, M.: Experimental determination of the dominant type of Auger recombination in InGaN quantum wells. Appl. Phys. Express 6, 112101 (2013)CrossRefADS
go back to reference Hader, J., Moloney, J.V., Koch, S.W.: Temperature-dependence of the internal efficiency droop in GaN-based diodes. Appl. Phys. Lett. 99, 181127 (2011)CrossRefADS Hader, J., Moloney, J.V., Koch, S.W.: Temperature-dependence of the internal efficiency droop in GaN-based diodes. Appl. Phys. Lett. 99, 181127 (2011)CrossRefADS
go back to reference Iveland, J., Martinalli, L., Peretti, J., Speck, J.S., Weisbuch, C.: Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013)CrossRefADS Iveland, J., Martinalli, L., Peretti, J., Speck, J.S., Weisbuch, C.: Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013)CrossRefADS
go back to reference Karpov, S.Y., Makarov, Y.N.: Dislocation effect on light emission efficiency in gallium nitride. Appl. Phys. Lett. 81, 4721–4723 (2002)CrossRefADS Karpov, S.Y., Makarov, Y.N.: Dislocation effect on light emission efficiency in gallium nitride. Appl. Phys. Lett. 81, 4721–4723 (2002)CrossRefADS
go back to reference Karpov, S.Y.: Effect of localized states on internal quantum efficiency of III-nitride LEDs. Phys. Stat. Solidi RRL 4, 320–322 (2010)CrossRef Karpov, S.Y.: Effect of localized states on internal quantum efficiency of III-nitride LEDs. Phys. Stat. Solidi RRL 4, 320–322 (2010)CrossRef
go back to reference Kim, M.-H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., Park, Y.: Origin of effi-ciency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91, 183507 (2007)CrossRefADS Kim, M.-H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., Park, Y.: Origin of effi-ciency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91, 183507 (2007)CrossRefADS
go back to reference Kioupakis, E., Rinke, P., Delaney, K.T., Van de Walle, C.G.: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett. 98, 161107 (2011)CrossRefADS Kioupakis, E., Rinke, P., Delaney, K.T., Van de Walle, C.G.: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett. 98, 161107 (2011)CrossRefADS
go back to reference Kisin, M.V., Chuang, C.-L., El-Ghoroury, H.S.: Effect of active QW population on optical charac-teristics of polar, semipolar and nonpolar III-nitride light emitters. Semicond. Sci. Technol. 27, 024012 (2012a)CrossRefADS Kisin, M.V., Chuang, C.-L., El-Ghoroury, H.S.: Effect of active QW population on optical charac-teristics of polar, semipolar and nonpolar III-nitride light emitters. Semicond. Sci. Technol. 27, 024012 (2012a)CrossRefADS
go back to reference Kisin, M.V., Chuang, C.-L., El-Ghoroury, H.S.: Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters. J. Appl. Phys. 111, 103113 (2012b)CrossRefADS Kisin, M.V., Chuang, C.-L., El-Ghoroury, H.S.: Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters. J. Appl. Phys. 111, 103113 (2012b)CrossRefADS
go back to reference Krames, M.R., Christenson, G., Coffins, D., Cook, L.W., Craford, M.G., Edwards, A., R. M., Fletcher, N. Gardner, W. Goetz, W. Imler, E. Johnson, R. S. Kern, R. Khare, F. A. Kish, C., Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. Maranowski, P. S. Martin, J. O’Shea, S., Rudaz, D. Steigerwald, J. Thompson, J. J. Wierer, J. Yu.: High-brightness A1GaInN light-emitting diodes. Proc. SPIE 3938, 2–12 (2000) Krames, M.R., Christenson, G., Coffins, D., Cook, L.W., Craford, M.G., Edwards, A., R. M., Fletcher, N. Gardner, W. Goetz, W. Imler, E. Johnson, R. S. Kern, R. Khare, F. A. Kish, C., Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. Maranowski, P. S. Martin, J. O’Shea, S., Rudaz, D. Steigerwald, J. Thompson, J. J. Wierer, J. Yu.: High-brightness A1GaInN light-emitting diodes. Proc. SPIE 3938, 2–12 (2000)
go back to reference Laubsch, A., Sabathil, M., Bergbauer, W., Strassburg, M., Lugauer, H., Peter, M., Lutgen, S., Linder, N., Streubel, K., Hader, J., Moloney, J.V., Pasenow, B., Koch, S.W.: On the origin of IQE-’droop’ in InGaN LEDs. Phys. Stat. Solidi C 6, S913–S916 (2009)CrossRefADS Laubsch, A., Sabathil, M., Bergbauer, W., Strassburg, M., Lugauer, H., Peter, M., Lutgen, S., Linder, N., Streubel, K., Hader, J., Moloney, J.V., Pasenow, B., Koch, S.W.: On the origin of IQE-’droop’ in InGaN LEDs. Phys. Stat. Solidi C 6, S913–S916 (2009)CrossRefADS
go back to reference Laubsch, A., Sabathil, M., Baur, J., Peter, M., Hahn, B.: High-power and high-efficiency InGaN-based light emitters. IEEE TED 57, 79–87 (2010)CrossRef Laubsch, A., Sabathil, M., Baur, J., Peter, M., Hahn, B.: High-power and high-efficiency InGaN-based light emitters. IEEE TED 57, 79–87 (2010)CrossRef
go back to reference Mukai, T., Yamada, M., Nakamura, S.: Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn. J. Appl. Phys. 38, 3976–3981 (1999)CrossRefADS Mukai, T., Yamada, M., Nakamura, S.: Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn. J. Appl. Phys. 38, 3976–3981 (1999)CrossRefADS
go back to reference Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Stat. Solidi A 207, 2217–2225 (2010)CrossRefADS Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Stat. Solidi A 207, 2217–2225 (2010)CrossRefADS
go back to reference Piprek, J., Li, S.: Sensitivity analysis of electron leakage in III-nitride light-emitting diodes. Appl. Phys. Lett. 102, 131103 (2013)CrossRefADS Piprek, J., Li, S.: Sensitivity analysis of electron leakage in III-nitride light-emitting diodes. Appl. Phys. Lett. 102, 131103 (2013)CrossRefADS
go back to reference Polkovnikov, A.S., Zegrya, G.G.: Auger recombination in semiconductor quantum wells. Phys. Rev. B 58, 4039–4056 (1998)CrossRefADS Polkovnikov, A.S., Zegrya, G.G.: Auger recombination in semiconductor quantum wells. Phys. Rev. B 58, 4039–4056 (1998)CrossRefADS
go back to reference Rozhansky, I.V., Zakheim, D.A.: Analysis of the causes of the decrease in the electroluminescence efficiency of AlGalnN light-emitting-diode heterostructures at high pumping density. Semiconductors 40, 839–845 (2006)CrossRefADS Rozhansky, I.V., Zakheim, D.A.: Analysis of the causes of the decrease in the electroluminescence efficiency of AlGalnN light-emitting-diode heterostructures at high pumping density. Semiconductors 40, 839–845 (2006)CrossRefADS
go back to reference Ryu, H.-Y., Kim, H.-S., Shim, J.-I.: Rate equation analysis of efficiency droop in InGaN light-emitting diodes. Appl. Phys. Lett. 95, 081114 (2009) Ryu, H.-Y., Kim, H.-S., Shim, J.-I.: Rate equation analysis of efficiency droop in InGaN light-emitting diodes. Appl. Phys. Lett. 95, 081114 (2009)
go back to reference Shchekin, O.B., Epler, J.E., Trottier, T.A., Margalith, T., Steigerwald, D.A., Holcomb, M.O., Martin, P.S., Krames, M.R.: High performance thin-film flip-chip InGaN-GaN light-emitting diodes. Appl. Phys. Lett. 89, 071109 (2006)CrossRefADS Shchekin, O.B., Epler, J.E., Trottier, T.A., Margalith, T., Steigerwald, D.A., Holcomb, M.O., Martin, P.S., Krames, M.R.: High performance thin-film flip-chip InGaN-GaN light-emitting diodes. Appl. Phys. Lett. 89, 071109 (2006)CrossRefADS
go back to reference Schiavon, D., Binder, M., Peter, M., Galler, B., Drechsel, P., Scholz, F.: Wavelength-dependent de-termination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes. Phys. Stat. Solidi B 250, 283–280 (2013)CrossRefADS Schiavon, D., Binder, M., Peter, M., Galler, B., Drechsel, P., Scholz, F.: Wavelength-dependent de-termination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes. Phys. Stat. Solidi B 250, 283–280 (2013)CrossRefADS
go back to reference Shen, Y.C., Müller, G.O., Watanabe, S., Gardner, N.F., Munkholm, A., Krames, M.R.: Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91, 141101 (2007)CrossRefADS Shen, Y.C., Müller, G.O., Watanabe, S., Gardner, N.F., Munkholm, A., Krames, M.R.: Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91, 141101 (2007)CrossRefADS
go back to reference Shin, D.-S., Han, D.-P., Oh, J.-Y., Shim, J.-I.: Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence. Appl. Phys. Lett. 100, 153506 (2012) Shin, D.-S., Han, D.-P., Oh, J.-Y., Shim, J.-I.: Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence. Appl. Phys. Lett. 100, 153506 (2012)
go back to reference Titkov, I.E., Karpov, S.Yu., Yadav, A., Zerova, V.L., Zulonas, M., Galler, B., Strassburg, M., Pietzonka, I., Lugauer, H.-J., Rafailov, E.U.: Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes. IEEE JQE 50, 911–920 (2014) Titkov, I.E., Karpov, S.Yu., Yadav, A., Zerova, V.L., Zulonas, M., Galler, B., Strassburg, M., Pietzonka, I., Lugauer, H.-J., Rafailov, E.U.: Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes. IEEE JQE 50, 911–920 (2014)
go back to reference Vaxenburg, R., Lifshitz, E., Efros, A.L.: Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes. Appl. Phys. Lett. 102, 031120 (2013) Vaxenburg, R., Lifshitz, E., Efros, A.L.: Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes. Appl. Phys. Lett. 102, 031120 (2013)
go back to reference Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101 (2013)CrossRefADS Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101 (2013)CrossRefADS
go back to reference Zakheim, D.A., Pavluchenko, A.S., Bauman, D.A.: Blue LEDs: way to overcome efficiency droop. Phys. Status Solidi C 8, 2340–2344 (2011)CrossRef Zakheim, D.A., Pavluchenko, A.S., Bauman, D.A.: Blue LEDs: way to overcome efficiency droop. Phys. Status Solidi C 8, 2340–2344 (2011)CrossRef
Metadata
Title
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
Author
Sergey Karpov
Publication date
01-06-2015
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 6/2015
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-014-0042-9

Other articles of this Issue 6/2015

Optical and Quantum Electronics 6/2015 Go to the issue