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Journal of Materials Science: Materials in Electronics

Achieving high energy storage density under low electric field in modified bismuth sodium titanate ceramics

  • 01-04-2023
Published in:
Authors
Jun Wang
Tianyu Li
Cong Zhou
Attaur Rahman
Donglai Chen
Xuewen Jiang
Aiwen Xie
Haiqiang Ma
Xia Fang
Zihan Yang
Huiwen Zheng
Ruzhong Zuo
Published in
Journal of Materials Science: Materials in Electronics | Issue 12/2023

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Abstract

The article investigates the potential of modified bismuth sodium titanate ceramics for high energy storage density under low electric fields. By incorporating Sr0.85Bi0.1TiO3 into Na0.5Bi0.5TiO3-NaNbO3 ceramics, the researchers achieved a remarkable recoverable energy storage density of 3.94 J/cm3 and an efficiency of 84% under a low electric field of 24 kV/mm. The study also highlights the excellent temperature and frequency stability, as well as outstanding charge-discharge characteristics, making the NBT-NN-0.4SBT ceramic a promising candidate for high pulse power technology. The comprehensive analysis includes XRD patterns, SEM images, dielectric properties, and energy storage performance, providing a detailed insight into the material's potential for advanced energy storage applications.
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previous article Effect of synthesis temperatures on the composition, microstructure, and microwave absorption properties of titanium nitride porous nanofibers prepared using ammonia reduction nitridation process
next article Impact of Er addition on the electrical, optical, and transmittance characteristics of 0.91KNN–0.09SMT ferroelectric ceramics
Title
Achieving high energy storage density under low electric field in modified bismuth sodium titanate ceramics
Authors
Jun Wang
Tianyu Li
Cong Zhou
Attaur Rahman
Donglai Chen
Xuewen Jiang
Aiwen Xie
Haiqiang Ma
Xia Fang
Zihan Yang
Huiwen Zheng
Ruzhong Zuo
Publication date
01-04-2023
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-10476-w
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