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2019 | OriginalPaper | Chapter

8. Aiming for a New Market: From CD to DVD

Author : Hiroshi Shimizu

Published in: General Purpose Technology, Spin-Out, and Innovation

Publisher: Springer Singapore

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Abstract

As we saw in Chap. 7, when laser diode R&D began in the 1960s, specific application had not yet been identified nor was it the clear driving force behind R&D. Optical communication later became the most common application of laser diode from the beginning of 1970s.

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previous chapter Competition over Communications: Long-Wavelength Laser Diode

next chapter From Red to Blue: Competition for Shorter Wavelengths

This is briefly summarized in the followings. Suematsu, Y., and K. Kobayashi (2007): Photonics: Optoelectronics and Its Progress (Fotonikusu: Hikari Electronikusu to Sono Shinten). Tokyo: Ohmusha, p. 263. Kanbe, H. (2001): Begineers’ Handbook of Semiconductor Laser Technology (Hajimete no Handotai Reza Gijutsu). Tokyo: Kogyo Chosakai, pp. 135–138. Shono, M. (1999): “Laser Diodes for Optical Disk Systems,” Oyo Butsuri, 68, 1285–1288, Shono, M., and A. Ibaraki (1998): ibid., 67, 1035–1040.

Rice, P., and R. F. Dubbe (1982): “Development of the First Optical Videodisc,” SMPTE Motion Imaging Journal 91, 277–284.

For example, Oikado, T., N. taguchi, and K. Shintaku (1978): “He-Ne Laser for Video Disc,” Nihon Denki Giho (Nippon Electric Technical Report), 124, 74–75.

Regarding digitization of music, see Nakajima, H. (1994): Audio New Era: Music with Numbers (Ohdhio Shinjidai: Ongaku o Suji de Kizamu). Tokyo: Shokabo.

It is said that the TV news stations on the same night, as well as morning newspapers the following morning all wrote articles such as “Introducing Digital Player – Audio Dream Comes True” and “The Dawn of the ‘Digital Audio Era’”. See Sony (1996): “Origin: History of Sony, 50 Year Anniversary (Genryu: Sony Soritsu 50 Shunen Kinenshi).”

Regarding the development process of Sony’s CD player, see Nakajima, H. (1998): Challenge for Next Generation Audio: 50 Years for Good Sounds (Jisedai Ohdhio ni Idomu: Iioto, Kokochiyoi Oto o Motomete 50nen). Tokyo: Fuunsha.

The historic, first CD that was released was Billy Joel’s “52nd Street”.

The volume of domestic production of CDs illustrate the rapid spread of the CD system. In November 1984, a portable CD player called “D-50” (498 U.S. dollars, which is 49,800 yen) appeared into the market. At the time, the production quantity of CDs was only about 1/10th of that of LP records. In 1986, only 1 years later, the LP record was overtaken in terms of volume at the point in which the annual CD production volume hit 45 million copies. Around 1988, CD production volume surpassed the LP record’s peak production volume of 100 million copies, and exceeded three times as that (300 million copies) in just 10 years in 1992.

An optical pickup is an optical head composed of an optical system and a laser diode for reading out signals from pits (grooves) on the disc, and writing signals onto the disc in optical disc systems such as CD, MD, DVD, etc. The role of the optical pickup is to (1) focus the laser light on the pits on the disc, (2) trace the collected laser light, and (3) detect reflected light from the pits on the disc. The optical pickup is composed of components such as laser diode, a laser light detection IC, a beam splitter, a focusing lens, etc.

Regarding the development of RCA’s video disc, see Graham, M. B. W. (1986): RCA and the Videodisc: The Business of Research. Cambridge, Cambridgeshire; New York: Cambridge University Press.

Regarding the development of optical discs at JVC, see Takahashi, M. (1991): “Struggle of Unique Technology: The Case of VHD Video Disk (Dokuso Gijyutsu Tachi no Kuto 12 Kan VHD Bideo Dhisuku Reza Gijyutsu no Kyushinten ni Kyushita Hinomaru Gijyutsu),” Science Asahi (Kagaku Asahi), 51, 110–114.

Anazawa, T., T. Arai, K. Tsurushima, S. Tomidokoro, K. Handa, S. Moriwaki, and T. Ito (1983): “Compact Disc: Its Birth and Future,” Acoustical Science and Technology, 39, 478–491.

Ibid.

Nakajima, H. (1998): Challenge for Next Generation Audio: 50 Years for Good Sounds (Jisedai Ohdhio ni Idomu: Iioto, Kokochiyoi Oto o Motomete 50nen). Tokyo: Fuunsha.

Yamamoto, S. (2009): “Story of Laser Diode Development (Handotai Reza Tanjyo Hiwa),” Sharp Technical Journal, 99, 52–53.

Both firms had already signed a free-cross-license agreement (a contract that allowed mutual, free use of patents owned by each other) in 1966 for VTRs, but a month after they started their joint development of digital audio disks, they re-signed a broader free-cross-license agreement which included the scope of disc development. The collaborative research was alternately held in Tokyo and Eindhoven every few months, where they exchanged opinions and their research outcomes. Those who attended these meetings and participated in the technological negotiation from Sony’s side were Nakashima and Doi from the engineering lab, and Miyaoka and others from the Disk Development Department. At first, the discussions began peacefully “by first deciding on the general topics of installing the signal,” but pretty soon, the passionate technicians from both firms started having hard discussions with each other. Philips was a leader in optical video discs, and Sony was a developer of digital audio signal processing technology. There was no doubt that if the two firms joined forces, the ideal music media would be born. In addition, both firms had their own software company. Philips had their world-renowned record company called Polygram, and Sony also had CBS/Sony Record (now Sony Music Entertainment) that they established in 1968, which was growing rapidly. They will eventually become the software provider of this new media. Ohga, who was the Vice President of Sony at the time, was also the President of CBS/Sony. For the details, see Sony (1996): “Origin: History of Sony, 50 Year Anniversary (Genryu: Sony Soritsu 50 Shunen Kinenshi).”

For the detail on each method, see Nakajima, H., and H. Ogawa (1996): Introduction of Compact Disc (Zukai Konpakuto Dhisuku Dokuhon). Tokyo: Ohmusha, pp. 74–79. There was a big difference between the optical method proposed by Sony/Philips and the other two schemes. In the case of optical disks, the signal plane made up of pits (small depressions) is inside the disc and there are no grooves on the surface at all. Since the player’s pickup does not come in contact with the disc, and it simply reads the internal signal by emitting light onto the disc, it poses no problems that arise due to having a contact, such as abrasion, friction, clogging, etc., and it allows longer lifespan. It allows the repeated playback of high quality sound that is close to the original sound, even if the disc is handled in a rough manner to some extent. Sony’s engineers thought that “the next-generation disc that will replace the LP record must be easier to handle.” Both of the other two methods read signals by coming in contact with the disc. Sony (1996): “Origin: History of Sony, 50 Year Anniversary (Genryu: Sony Soritsu 50 Shunen Kinenshi).”

Aiki, K., S. Kajimura, and N. Chinone (1983): “Laser Diodes for Optical Information Processing Systems,” Hitachi Review (Hitachi Hyoron), 65, 713–716.

Fujimoto, M. (1992): “Passion Is Important (Jyonetsu o Motteiruka Dokade Kimarimasu),” Optronics, 11, 215–221.

Itoh, K., M. Inoue, and I. Teramoto (1975): “New Heteroisolation Stripe-Geometry Visible-Light-Emitting Lasers,” IEEE Journal of Quantum Electron, QW-11, 421–426.

See Ito, K. (2009): Basics of Laser Diode (Handotai Reza no Kiso Masuta). Tokyo: Denkishoin, pp. 127–128.

“This Year’s Focus in the Electronics Industry (5) The ‘Challenge’ Lies in the DAD-Laser Diode”, “Nikkei Sangyo Shimbun”, January 1, 1982.

Regarding the R&D and commercialization of laser diodes by Sharp, see Yamamoto, S. (2009): “Story of Laser Diode Development (Handotai Reza Tanjyo Hiwa),” Sharp Technical Journal, 99, 52–53.

Interview [12].

Regarding this case, see Ito, K. (2009): Basics of Laser Diode (Handotai Reza no Kiso Masuta). Tokyo: Denkishoin, pp. 141–142.

It requires no mask alignment nor diffusion process in the element formation process, and it can be completed with only the electrode formation.

Katayama, T. (2009): “Story of Laser Diode Development (Handotai Reza Kaihatsu Monogatari),” Sharp Technical Journal, 99, 4–9, Yamamoto, S. (ibid. “Story of Laser Diode Development (Handotai Reza Tanjyo Hiwa),” 52–53.

— (2009): “Story of Laser Diode Development (Handotai Reza Tanjyo Hiwa),” Sharp Technical Journal, 99, 52–53.

In 1983, it was also adopted in the industry’s first laser disc player that used a laser diode (manufactured by Pioneer).

“Short Wavelength Laser Diode – Sharp Takes the Lead in the CD Industry – Mitsubishi, Matsushita and Others Trail Behind (Coverage on Business Competition)” “Nikkei Sangyo Shimbun” April 2, 1985.

Element, which utilized quantum tunneling effect, invented by Leo Esaki in 1957. When a current flows in the forward direction, “negative resistance” appears in which the amount of current flowing in certain voltage region decreases as the voltage is applied due to the tunnel effect. Oscillator circuits and amplifiers using this technology exhibited excellent performance far superior to conventional transistors. In 1973, Esaki was awarded the Nobel Prize in Physics for his achievement, along with Ivar Giaever and Brian D. Josephson.

In the pursuit of their CD research, Sony established a joint team between the Central Research Laboratory and the operations division within the Central Research Laboratory. This research method was the system used in developing the CCD, before the development of CD. In order to smoothly transfer the technology of Central Research Laboratory to Atsugi (operations division) that handled mass production, a research from the operations division went to the lab, learned the technology, and modified it from the viewpoint of the operations division. This was a system that assumed a smooth mass production by transferring the team itself to Atsugi’s operations division during the mass production stage.

Mori, Y. (1982): “MOCVD Growth of GaAs and AlGaAs,” Oyo Butsuri, 51, 925–930, Mori, Y., and N. Watanabe (1980): “Semiconductor Lasers Grown from Vapor Phase Using Metalorganic Compounds,” ibid., 49, 1239–1243.

For the detail on its history, refer to Dupuis, R. D., and M. R. Krames (2008): “History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes,” Journal of Lightwave Technology, 26, 1154–1171.

The advantages and disadvantages of index-guided lasers and gain-guided lasers are briefly described as follows. Advantages of the index-guide type are low current consumption, good coupling with optical system, and small astigmatic difference. Conversely, the disadvantage was the unstable noise generated from external disturbances such as return light from the disc, temperature change, etc. On the other hand, the advantage of the gain-guide type is that the noise characteristics are stabilized against external disturbance. Its disadvantages are the large power consumption, the bimodal beam shape, inferior coupling with the lens, and the large astigmatic difference.

Astigmatism means that the apparent focal position of a laser diode differs between a perpendicular direction and horizontal direction to the joint, as shown in the figure below. The distance between these two focal points is called the astigmatic difference, and the smaller the value, the better the convergence of the light beam. In this case study, the difference in the virtual light source position of the laser diode is taken as the astigmatic difference.

Mori, Y. (1984): “MOCVD Technology (MOCVD Seimaku Gijyutsu),” Electrochemistry, 52, 407–411.

The fact that it overlapped with the commercialization timing of the next generation model of their CD player (D-50) had some impact on the said decision as well.

Even with similar devices, defects may be contained in the semiconductor crystal, or damage may occur during the process. It refers to a reliability test for selecting weak elements from the viewpoint of reliability.

“Semiconductor Firms Respond to the Simultaneous Release of CDs by Increasing Laser Production – Tottori Sanyo Electric Will Output 5x by Next Spring”, Nikkei Sangyo Shimbun, October 16, 1982.

“Phillips Request Sharp to Increase Supply of Laser Diode for CD Player”, Nikkei Sangyo Shimbun, December 14, 1982.

Masegi, K. (1984): “Laser Diode Printer (Handotai Reza Purinta),” Japanese Journal of Optics, 13, 149–150.

Kitamura, T., and K. Masegi (1979): “Laser Printer (Reza Purinta),” Journal of the Institute of Image Electronics Engineering of Japan, 8, 158–166.

Interview [144].

Arimoto, A., S. Saito, and S. Moriyama (1990): “High Speed Laser Diode Printer (Kosoku Handotai Reza Printa),” Japanese Journal of Optics, 19, 350–355.

“Canon Develops and Releases “LBP-10″ Desktop Printer using Laser Diode”, Nikkei Sangyo Shimbun, April 3, 1979.

Interview [23, 24].

Saito, S., M. Anzai, E. Wada, R. Kojima, and K. Tajima (1983): “High Speed Laser Beam Printer,” Hitachi Review (Hitachi Hyoron), 65, 687–690. “Hitachi Expands OA Device Lineup – Releases High Performance Japanese WP and Low Price Laser Diode Printer”, Nikkei Sangyo Shimbun, March 9, 1982.

“Sharp’s High-Speed and Affordable Laser Printer Infiltrates the Market – 15,000 U.S. dollar (1.5 Million yen) per Unit, Excellent Resolution”, Nikkei Sangyo Shimbun, October 14, 1981.

“Sharp Starts External Sale of ‘Laser Diode LT-001SA’ Infrared Laser Diode”, Nikkei Sangyo Shimbun, June 14, 1980.

“Sharp Releases Dental Medical Equipment Installed with Laser Diode”, Nikkei Sangyo Shimbun, January 19, 1988.

“Fujitsu, Olympus and Asahi Kasei Succeeded in Developing an Optical Disk Device – Allows Additional Recording on the Board Margin”, Nihon Keizai Shimbun, Morning Paper, April 28, 1982.

“NEC Developed OA Optical Disk Device & Launches this Fall – Can Also Record Code Information”, Nikkei Sangyo Shimbun, April 1, 1983.

Akatsu, K., T. Hazama, A. Arimoto, and T. Goto (1983): “Development of Optical Video Disc and Player,” Hitachi Review (Hitachi Hyoron), 65, 697–702.

“Kawasaki Steels Quality Control of Thin Plate Using Sensor – Improves Surface Flatness and Enables More Beautiful Coating of Can”, Nikkei Sangyo Shimbun, August 1, 1983.

“Toshiba Develops 3D Laser Processing Machine – Safe & Quick Positioning via Sensor”, Nikkei Sangyo Shimbun, January 29, 1985.

“Fujitsu Develops Laser Diode System that Instantly Measures Gas Concentration – Up to 0.01 PPM”, Nikkei Sangyo Shimbun, April 3, 1985.

Takagi, Y., Y. Kojima, T. Takakusagi, H. Kurine, and T. Yoshioka (1986): “Laser Applied Three-Dimensional Profile Measuring Apparatus,” Hitachi Review (Hitachi Hyoron), 68, 255–258.

“NEC, Fluid Surveillance in Pipes – New System for Petrochemical Facility”, Nihon Keizai Shimbun, Morning Paper, March 14, 1986.

Hayashi, I. (1986): “Future of OEIC (OEIC eno Tenbo),” Electronics (Erekutoronikusu), 31, 43–46.

Interview [4].

Fujitsu, the lead managing firm of this project, showed their great expectation for OEIC in their technical report. Oguchi, F. (1982): “Preface for Optoelectronics Technology Special Issue (Hikari Gijyutsu Tokushugo no Hakkan ni Atatte),” Fujitsu, 33, 1–2.

Interview [4].

Komatsu, S., T. Baba, T. Sanpei, T. Takeuchi, and Y. Fukurotani (1987): “CD-Rom and Its Application Systems,” Hitachi Review (Hitachi Hyoron), 69, 1051–1058.

Kajimura, S., and K. Urita (ibid. “High Power Laser Diodes for Optical Information Processing Systems,” 1073–1076.

Interview [11, 20, 43].

Ito, R. (1980): “Semiconductor Lasers,” Journal of the Institute of Television Engineers of Japan, 34, 121–128, Saito, F. (1981): “Recent Trends in Semiconductor Laser Recording,” Journal of the Society of Scientific Photography of Japan, 44, 123–127.

Regarding the trend of R&D of laser diodes for optical disks in the early 1980s, see Hijikata, T., and H. Takiguchi (1984): “Laser Diodes for Optical Disc Recording,” Review of Laser Engineering, 12, 63–73.

Holonyak, N. J., and S. S. F. Bevacqua (1962): “Coherent (Visible) Light Emission from Ga(As_1-Xp_x) Junctions,” Applied Physics Letters, 1, 82–83.

Yamamoto, S., H. Hayashi, T. Hayakawa, N. Miyauchi, S. Yano, and T. Hijikata (1982): “Room-Temperature CW Operation in the Visible Spectral Range of 680–700 nm by AlGaAs Double Heterojunction Lasers,” ibid., 41, 796–798.

Teramoto, I. (1980): “Visible Emission Laser Diodes,” Oyo Butsuri, 49, 887–894.

Suematsu, Y., and K. Kobayashi (2007): Photonics: Optoelectronics and Its Progress (Fotonikusu: Hikari Electronikusu to Sono Shinten). Tokyo: Ohmusha, p. 268.

The band gap energy is the energy level difference between the energy bands in which electrons in the semiconductor can exist. The emission color (emission wavelength) is determined by this energy difference. It is also an index of the voltage applied to the device.

Suematsu, Y., and K. Kobayashi (2007): Photonics: Optoelectronics and Its Progress (Fotonikusu: Hikari Electronikusu to Sono Shinten). Tokyo: Ohmusha, p. 279.

Compound semiconductors include multi-element systems such as ternary, quaternary, and five-element systems in addition to binary systems in which the number of elements constituting the compound semiconductor is two. In the binary system, when one set of elements is selected, the energy band gap energy as well as the wavelength of the emitted light are determined at that point. When it comes to a ternary system, energy can be continuously varied depending on the composition, which makes it possible to design an active layer material having an emission wavelength conforming to the designed purpose. Further, in the quaternary system, another degree of freedom such as the lattice constant and the refractive index of light can be optimized as well. As components increase, the manufacturing technology becomes complicated and problems of controllability arise. In crystal growth, it is necessary to match the lattice constant of the substrate and the epitaxial layer (thin film). In the case where lattice matching does not occur, strain energy is elastically and mechanically introduced in the crystal, which changes the bond energy (band structure) in the crystal and renders it thermodynamically unstable. Fortunately, in the GaAlAs system, the lattice constant of GaAs and AlAs is almost the same, so the lattice matching condition was automatically satisfied in the GaAlAs growth process on GaAs. On the other hand, in the InGaAlP system, the atomic radii of In, Ga and Al greatly differ from each other, and hence, precise control of the composition is required to satisfy the lattice matching condition.

Asahi, H., Y. Kawamura, and H. Nagai (1982): “Molecular Beam Epitaxial Growth of Ingaalp on (100) GaAs,” Journal of Applied Physics, 53, 492–498.

Hino, I., K. Kobayashi, and T. Suzuki (1984): “High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition – Impurity Doping and 590 Nm (Orange) Electroluminescence,” Japanese Journal of Applied Physics, 23, 746–748.

Ikeda, M., Y. Mori, H. Sato, K. Kaneko, and N. Watanabe (1985): “Room-Temperature Continuous-Wave Operation of an AlGaInP Double Heterostructure Laser Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition,” Applied Physics Letters, 47, 1027–1028, Ishikawa, M., Y. Ohba, H. Sugawara, M. Yamamoto, and T. Nakanishi (1986): “Room-Temperature CW Operation of InGaP/InGaAlP Visible Laser Diodes on GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition,” Applied Physics Letter, 48, 207–208, Kobayashi, K., S. Kawata, A. Gomyo, I. Hino, and T. Suzuki (1985): “Room-Temperature CW Operation of AlGaInP Double Heterostructure Visible Lasers,” Electronics Letters, 21, 931–932.

Interview [20].

Suzuki, T. (1986): “AlGaInP Visible Semiconductor Lasers Grown by Metalorganic Vapor Phase Epitaxy,” 149–152.

Hamada, H., M. Shono, S. Honda, R. Hiroyama, k. Yodoshi, and T. Yamaguchi (1991): “AlGaInP Visible Laser Diodes Grown on Misoriented Substrates,” IEEE Journal of Quantum Electronics, 27, 1483–1490, Minagawa, S., M. Kondow, and H. Kakibayashi (1989): “Disappearance of Long-Range Ordering in Ga_0.5in_0.5p with Tilting of Substrate from (100) Towards (511)A,” Electronics Letters, 25, 1439–1440, Minagawa, S., T. Tanaka, and M. Kondow (ibid. “Room-Temperature Continuous-Wave Operation of Short-Wavelength Gainp/AlGaInP Laser Grown on (511)A GaAs Substrate by Metalorganic Vapour Phase Epitaxy,” 925–926.

Nitta, K., K. Itaya, Y. Nishikawa, M. Ishikawa, M. Okajima, and G. Hatakoshi (1991): “High-Power (10mw) CW Operation of Transverse-Mode Stabilized Ingaalp Laser Diodes with Strained In_0.62ga_0.38p Active Layer,” ibid., 27, 1660–1661.

This was a structure using an active layer whose crystal lattice constant differed from that of the cladding layer. Oscillation wavelength and gain characteristics change due to the effect of strain applied to the active layer. Depending on the positive and negative strain, it experiences compression strain or tensile strain. Since the active layer needs to be less than the critical film thickness at which lattice relaxation occurs, it is often used in combination with the quantum well structure in many cases. Hatakoshi, G.-I. (1997): “Visible Semiconductor Lasers,” Journal of the Institute of Electronics, Information and Communication Engineers, 80, 692–696.

Ishikawa, M. (1988): “Current Status of 0.6 μm Visible Laser Diode (0.6 μm Tai Kashiko Handotai Reza no Genjyo),” Review of Laser Engineering, 16, 49–52, Suzuki, T. (1988): “0.6 μm Visible Laser Diode (0.6 μm Tai Kashiko Handotai Reza),” Japanese Journal of Optics, 17, 8–13.

Fukuda, A. (1987): “Development of 650-690 nm Laser Diode to Be Released in the Next Year (Hacho 650-690 nm no Akairo Handotai Reza, Rainen no Seihinka o Mezashite Kaihatsu ga Susumu),” Nikkei Electronics, 427, 127–135.

Ikeda, H., and T. Inagaki (1987): “Barcode Input Devices Using Laser Sweeping Technology (Reza Sosa Gijutsu o Mochiita Bacodo Nyuryoku Kiki),” Journal of the Institute of Electrical Engineers of Japan, 107, 545–548.

TOLD9200(S) Toshiba Laser Diode, 3 mW Power, 680 nm Wave Length, 70 mA Current.

Technically, He-Ne lasers were not expected to go through any further progress, and most of its applications were expected to be replaced by laser diodes, especially visible laser diodes in the future. Yano Research Institute (1984): “Current Status of Growning Laser Industry and Its Demand Prospects (Kakudaisuru Reza Sangyo no Shijyo Jittai to Kongo no Jyuyo Tenbo),” Tokyo: Yano Research Institute.

The market for He-Ne lasers for POS scanners were dominated by two firms: NEC and Spectra-Physics. Ibid.

Interview [20].

A red laser is a laser that emits a wavelength between 630 and 680 nm.

Furuya, A., and T. Tanahashi (2000): “Visible Laser Diode (Kashiko Handotai Reza),” Fujitsu, 51, 184–189.

If a journal/book does not provide a title in English, the title is translated into English and the original title in Japanese is in the bracket.

Teramoto, I. (1980). Visible emission laser diodes. Oyo Butsuri, 49, 887–894.

Title: Aiming for a New Market: From CD to DVD
Author: Hiroshi Shimizu
Publisher: Springer Singapore
Book: General Purpose Technology, Spin-Out, and Innovation
Print ISBN: 978-981-13-3713-0

Electronic ISBN: 978-981-13-3714-7

Copyright Year: 2019
DOI: https://doi.org/10.1007/978-981-13-3714-7_8