Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Published in:
Introduction Read chapter Read first chapter

2020 | OriginalPaper | Chapter

6. AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs

Authors : Jinmin Li, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, Bin Xue

Published in: III-Nitrides Light Emitting Diodes: Technology and Applications

Publisher: Springer Singapore

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Ultraviolet (UV) light, which is shorter than the wavelength of visible light, has important applications in the field of sterilization and disinfection. Among them, UV-C light (250–280 nm) can destroy nucleic acids, the genetic material of microorganisms, through photochemical action.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
previous chapter InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs
next chapter III-Nitride LED Quantum Efficiency Improvement Technology
Literature
1.
H. Hirayama, N. Noguchi, S. Fujikawa et al., 222–282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template. Proc. SPIE 7216, 721621 (2009)
2.
H. Morkoç, Handbook of Nitride semiconductors and devices: materials properties, physics and growth (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
3.
O. Ambacher, Growth and applications of group III-nitrides. J. Phys. D Appl. Phys. 31(20), 2653–2710 (1998)ADS
4.
O.H. Nam, M.D. Bremser, T.S. Zheleva et al., Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71(18), 2638–2640 (1997)ADS
5.
M. Stutzmann, O. Ambacher, M. Eickhoff et al., Playing with polarity. Physica Status Solidi(b) 228(2), 505–512 (2001)
6.
T.G. Mihopoulos, V. Gupta, K.F. Jensen, A reaction-transport model for AlGaN MOVPE growth. J. Cryst. Growth 195(1–4), 733–739 (1998)ADS
7.
K. Harafuji, Transport of gas-phase species stored in stagnant volumes under a GaN metalorganic vapor phase epitaxy horizontal reactor. Jpn. J. Appl. Phys. 40(11), 6263–6283 (2001)ADS
8.
B. Heying, X.H. Wu, S. Keller et al., Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. Appl. Phys. Lett. 68(5), 643–645 (1996)ADS
9.
S.R. Lee, A.F. Wright, M.H. Crawford et al., The band-gap bowing of AlxGa1−xN alloys. Appl. Phys. Lett. 74(22), 3344–3346 (1999)ADS
10.
O. Ambacher, J. Majewski, C. Miskys et al., Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J. Phys.: Condens. Matter 14(13), 3399–3434 (2002)ADS
11.
A. Khan, K. Balakrishnan, T. Katona et al., Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics 2(2), 77–84 (2008)ADS
12.
C.J. Sun, P. Kung, A. Saxler et al., A crystallographic model of (001) aluminum nitride epitaxial thin film growth on (001) sapphire substrate. J. Appl. Phys. 75(8), 3964–3967 (1994)ADS
13.
S. Guha, N.A. Bojarczuk, Ultraviolet and violet GaN light emitting diodes on silicon. Appl. Phys. Lett. 72(4), 415–417 (1998)ADS
14.
N. Ikeda, Y. Niiyama, H. Kambayashi et al., GaN power transistors on Si substrates for switching applications. Proc. IEEE 98(7), 1151–1161 (2010)
15.
T. Mino, H. Hirayama, T. Takano et al., Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates. Proc. SPIE 8625, 86251Q (2013)
16.
Y. Zhang, S. Gautier, C.-Y. Cho et al., Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111). Appl. Phys. Lett. 102(1), 011106 (2013)ADS
17.
18.
M.A. Khan, J.N. Kuznia, D.T. Olson et al., GaN/AlN digital alloy short-period superlattices by switched atomic layer metal organic chemical vapor deposition. Appl. Phys. Lett. 63(25), 3470–3472 (1993)ADS
19.
M.A. Khan, V. Adivarahan, J.P. Zhang et al., Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells. Jpn. J. Appl. Phys. 40(12A), 1308–1310 (2001)ADS
20.
J.P. Zhang, E. Kuokstis, Q. Fareed et al., Pulsed atomic layer epitaxy of quaternary AlInGaN layers for ultraviolet light emitters. Physica Status Solidi a-Appl. Res. 188(1), 95–99 (2001)ADS
21.
J.P. Zhang, M.A. Khan, W.H. Sun et al., Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm. Appl. Phys. Lett. 81(23), 4392–4394 (2002)ADS
22.
H.M. Wang, J.P. Zhang, C.Q. Chen et al., AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire. Appl. Phys. Lett. 81(4), 604–606 (2002)ADS
23.
J.P. Zhang, H.M. Wang, M.E. Gaevski et al., Crack-free thick AlGaN grown on sapphire using AlN AlGaN superlattices for strain management. Appl. Phys. Lett. 80(19), 3542–3544 (2002)ADS
24.
V. Adivarahan, W.H. Sun, A. Chitnis et al., 250nm AlGaN light-emitting diodes. Appl. Phys. Lett. 85(12), 2175–2177 (2004)ADS
25.
V. Adivarahan, J. Zhang, A. Chitnis et al., Sub-milliwatt power III-N light emitting diodes at 285 nm. Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L435-L436 (2002)
26.
A. Chitnis, J.P. Zhang, V. Adivarahan et al., 324 nm light emitting diodes with milliwatt powers. Jpn. J. Appl. Phys. 41(Part 2, No. 4B), L450–L451 (2002)
27.
W.H. Sun, J.P. Zhang, V. Adivarahan et al., AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW. Appl. Phys. Lett. 85(4), 531–533 (2004)
28.
R.G. Banal, M. Funato, Y. Kawakami, Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy. Appl. Phys. Lett. 92(24), 241905 (2008)ADS
29.
R.G. Banal, M. Funato, Y. Kawakami, Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy. Physica Status Solidi (c) 7(7–8), 2111–2114 (2010)ADS
30.
M. Imura, K. Nakano, N. Fujimoto et al., High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio. Jpn. J. Appl. Phys. 45(11), 8639–8643 (2006)ADS
31.
M. Imura, N. Fujimoto, N. Okada et al., Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio. J. Cryst. Growth 300(1), 136–140 (2007)ADS
32.
H. Hirayama, T. Yatabe, N. Noguchi et al., 231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Appl. Phys. Lett. 91(7), 071901 (2007)ADS
33.
H. Hirayama, T. Yatabe, N. Noguchi et al., 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. Physica Status Solidi (c) 5(9), 2969–2971 (2008)ADS
34.
H. Hirayama, S. Fujikawa, N. Noguchi et al., 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. Physica Status Solidi (a) 206(6), 1176–1182 (2009)ADS
35.
Z. Chen, R.S. Qhalid Fareed, M. Gaevski et al., Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates. Appl. Phys. Lett. 89(8), 081905 (2006)ADS
36.
M. Shatalov, M. Gaevski, V. Adivarahan et al., Room-temperature stimulated emission from AlN at 214 nm. Jpn. J. Appl. Phys. 45(49), L1286–L1288 (2006)ADS
37.
V. Adivarahan, Q. Fareed, M. Islam et al., Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN. Jpn. J. Appl. Phys. 46(36), L877–L879 (2007)
38.
S. Hwang, D. Morgan, A. Kesler et al., 276 nm substrate-free flip-chip AlGaN light-emitting diodes. Appl. Phys. Express 4(3), 032102 (2011)ADS
39.
H. Hirayama, J. Norimatsu, N. Noguchi et al., Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. Physica Status Solidi (c) 6(S2), S474–S477 (2009)
40.
R. Jain, W. Sun, J. Yang et al., Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Appl. Phys. Lett. 93(5), 051113 (2008)ADS
41.
M.S. Shur, R. Gaska, Deep-ultraviolet light-emitting diodes. IEEE Trans. Electron Devices 57(1), 12–25 (2010)ADS
42.
M. Imura, K. Nakano, T. Kitano et al., Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy. Appl. Phys. Lett. 89(22), 221901 (2006)ADS
43.
M. Imura, K. Nakano, G. Narita et al., Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J. Cryst. Growth 298, 257–260 (2007)ADS
44.
M. Kim, T. Fujita, S. Fukahori et al., AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates. Appl. Phys. Express 4(9), 092102 (2011)ADS
45.
K. Iida, H. Watanabe, K. Takeda et al., High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate. Physica Status Solidi (a) 204(6), 2000–2004 (2007)ADS
46.
H. Tsuzuki, F. Mori, K. Takeda et al., Novel UV devices on high-quality AlGaN using grooved underlying layer. J. Cryst. Growth 311(10), 2860–2863 (2009)ADS
47.
R.T. Bondokov, S.G. Mueller, K.E. Morgan et al., Large-area AlN substrates for electronic applications: An industrial perspective. J. Cryst. Growth 310(17), 4020–4026 (2008)ADS
48.
J.R. Grandusky, J. Chen, M.C. Mendrick et al., Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes, in Lester Eastman Conference on High Performance Devices (LEC), pp. 1–2 (2012)
49.
J.R. Grandusky, J. Chen, S.R. Gibb et al., 270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power. Appl. Phys. Express 6(3), 032101 (2013)ADS
50.
T. Kinoshita, K. Hironaka, T. Obata et al., Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy. Appl. Phys. Express 5(12), 122101 (2012)ADS
51.
T. Kinoshita, T. Obata, T. Nagashima et al., Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy. Appl. Phys. Express 6(9), 092103 (2013)ADS
52.
B. Pantha, GaN and ZnO-based Materials and Devices (Springer, Berlin,Heidelberg, 2012)
53.
J. Li, K.B. Nam, J.Y. Lin et al., Optical and electrical properties of Al-rich AlGaN alloys. Appl. Phys. Lett. 79(20), 3245–3247 (2001)ADS
54.
J.P. Zhang, H.M. Wang, W.H. Sun et al., High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. J. Electron. Mater. 32(5), 364–370 (2003)ADS
55.
P. Cantu, S. Keller, U.K. Mishra et al., Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films. Appl. Phys. Lett. 82(21), 3683–3685 (2003)
56.
M.L. Nakarmi, K.H. Kim, K. Zhu et al., Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x ≥ 0.7). Appl. Phys. Lett. 85(17), 3769–3771 (2004)
57.
K. Zhu, M.L. Nakarmi, K.H. Kim et al., Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N. Appl. Phys. Lett. 85(20), 4669–4671 (2004)
58.
Y. Taniyasu, M. Kasu, T. Makimoto, Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V−1 s−1). Appl. Phys. Lett. 85(20), 4672–4674 (2004)ADS
59.
M. Kneissl, T. Kolbe, C. Chua et al., Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26(1), 014036 (2011)ADS
60.
L. Hsu, W. Walukiewicz, Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures. Appl. Phys. Lett. 74(17), 2405–2407 (1999)ADS
61.
P. Kozodoy, M. Hansen, S.P. DenBaars et al., Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices. Appl. Phys. Lett. 74(24), 3681–3683
62.
A. Saxler, W.C. Mitchel, P. Kung et al., Aluminum gallium nitride short-period superlattices doped with magnesium. Appl. Phys. Lett. 74(14), 2023–2025 (1999)ADS
63.
P. Kozodoy, Y.P. Smorchkova, M. Hansen et al., Polarization-enhanced Mg doping of AlGaN/GaN superlattices. Appl. Phys. Lett. 75(16), 2444–2446 (1999)ADS
64.
M.L. Nakarmi, K.H. Kim, J. Li et al., Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping. Appl. Phys. Lett. 82(18), 3041–3043 (2003)ADS
65.
J. Simon, V. Protasenko, C. Lian et al., Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327(5961), 60–64 (2010)ADS
66.
L. Zhang, K. Ding, J.C. Yan et al., Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 97(6), 062103 (2010)ADS
67.
A. Fujioka, T. Misaki, T. Murayama et al., Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells. Appl. Phys. Express 3(4), 041001 (2010)ADS
68.
S. Sumiya, Y. Zhu, J. Zhang et al., AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates. Jpn. J. Appl. Phys. 47(1), 43–46 (2008)ADS
69.
H. Hirayama, Y. Tsukada, T. Maeda et al., Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3(3), 031002 (2010)ADS
70.
L. Zhou, J.E. Epler, M.R. Krames et al., Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes. Appl. Phys. Lett. 89(24), 241113 (2006)ADS
71.
V. Adivarahan, A. Heidari, B. Zhang et al., Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region. Appl. Phys. Express 2(9), 092102 (2009)ADS
72.
H.Y. Ryu, I.G. Choi, H.S. Choi et al., Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl. Phys. Express 6(6), 062101 (2013)ADS
73.
P. Dong, Study on Efficiency Improvement of AlGaN-based UV LED, University of Chinese Academy of Sciences, Ph.D. thesis (in Chinese) (2014)
Metadata
Title
AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
Authors
Jinmin Li
Junxi Wang
Xiaoyan Yi
Zhiqiang Liu
Tongbo Wei
Jianchang Yan
Bin Xue
Copyright Year
2020
Publisher
Springer Singapore
Book
III-Nitrides Light Emitting Diodes: Technology and Applications

Print ISBN: 978-981-15-7948-6

Electronic ISBN: 978-981-15-7949-3

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-981-15-7949-3_6

Premium Partners

    Image Credits