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Journal of Sol-Gel Science and Technology
Published in: Journal of Sol-Gel Science and Technology 3/2014

01-09-2014 | Original Paper

An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol–gel spin coating technique

Authors: G. Turgut, S. Duman, F. S. Özçelik, E. Sönmez, B. Gürbulak

Published in: Journal of Sol-Gel Science and Technology | Issue 3/2014

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Abstract

Present study shows the structural, morphological, optical characterization of sol–gel spin coated ZnO:Al film and investigation of device efficiency of Zn/ZnO:Al/p-Si/Al heterojunction diode structure. X-ray diffraction study indicates that film has hexagonal polycrystalline structure with (002) preferential direction. Atomic force microscope and scanning electron microscope images exhibit that surface of ZnO:Al/p-Si consists of homogenously scattered nanoparticles. The surface roughness of ZnO:Al film is found to be 15.24 nm. The band gap value of ZnO:Al film deposited on glass substrate is calculated to be 3.34 eV. The electrical characterization of Zn/ZnO:Al/p-Si/Al heterojunction structure is made by current–voltage (I–V) and capacitance–voltage (C–V) measurements. From these measurements, the heterojunction structure shows a rectifying behavior under a dark condition. The ideality factor and barrier height of Zn/n-ZnO:Al/p-Si/Al structure are calculated as 3.23 and 0.68 eV. The heterojunction structure have diode characteristic with rectification ratio at 64.4 at +2.0 V in the dark. The results suggest that Zn/ZnO:Al/p-Si/Al heterojunction diode can be successfully used in many optoelectronic applications.
previous article Characterization of secondary structure and fad conformational state in free and sol–gel immobilized glucose oxidase
next article Three dimension Liesegang rings of calcium hydrophosphate in gelatin

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Literature
1.
Özgür Ü, Alivov YI, Liu C, Teke A, Doğan S, Reshchikov M, Avrutin V, Cho SJ, Morkoc H (2005) J Appl Phys 98:041301CrossRef
2.
Huang C, Wang M, Deng Z, Cao Y, Liu Q, Huang Z, Liu Y, Guo W, Huang Q (2010) J Mater Sci Mater Electron 21:1221–1227CrossRef
3.
Maldonado A, de la L Olvera M, Guerra ST, Asomoza R (2004) Sol Energy Sol Cell 82:75–84CrossRef
4.
Huang C, Wang M, Liu Q, Cao Y, Deng Z, Huang Z, Liu Y, Huang Q, Guo W (2009) Semicond Sci Tech 24:095019CrossRef
5.
Hongsingthong A, Yuna IA, Miyajima S, Konagai M (2011) Sol Energy Sol Cell 95:171–174CrossRef
6.
Jayakumar OD, Gopalakrishnan IK, Sudakar C, Kulshreshtha SK (2006) J Cryst Growth 294:432–436CrossRef
7.
Ruan HB, Fang L, Li DC, Saleem M, Qin GP, Kong CY (2011) Thin Solid Films 519:5078–5081CrossRef
8.
Miki-Yoshida M, Paraguay-Delgado F, Estrada-López W, Andrade E (2000) Thin Solid Films 376:99–109CrossRef
9.
Keskenler EF, Turgut G, Doğan S (2012) Superlattices Microstruct 52:107–115CrossRef
10.
Pawar BN, Ham D-H, Mane RS, Ganesh T, Cho BW, Han SH (2008) Appl Surf Sci 254:6294–6297CrossRef
11.
Chouikh F, Beggah Y, Aida MS (2011) J Mater Sci Mater Electron 22:499–505CrossRef
12.
Biswal RR, Velumani S, Babu BJ, Maldonado A, Tirado-Guerra S, Castaneda L, de la L Olvera M (2010) Mater Sci Eng B 174:46–49CrossRef
13.
Polyakov AY, Smirnov NB, Kozhukhova EA, Vdodin VI, Ip K, Heo YW, Norton DP, Pearton SJ (2003) Appl Phys Lett 83:1575CrossRef
14.
15.
Shukla RK, Srivastava A, Srivastava A, Dubey KC (2006) J Cryst Growth 294:427–431CrossRef
16.
17.
Musat V, Teixeir B, Fortunato E, Monteiro RCC, Vilarinho P (2004) Surf Coat Tech 180–181:659–662CrossRef
18.
Singh SP, Ooi ZE, Geok SNL, Goh GKL, Dodabalapur A (2011) Appl Phys Lett 98:073302CrossRef
19.
Bo H, Quan MZ, Jing X, Lei Z, Sheng ZN, Feng L, Cheng S, Ling S, Yue ZC, Shan YZ, Ting YY (2009) Mater Sci Semicond Process 12:248–252CrossRef
20.
Zebbar N, Kheireddine Y, Mokeddem K, Hafdallah A, Kechouane M, Aida MS (2011) Mater Sci Semicond Process 14:229–234CrossRef
21.
22.
Huang H, Fang G, Mo X, Long H, Wang H, Li S, Li Y, Zhang Y, Pan C, Carroll DL (2012) Appl Phys Lett 101:223504CrossRef
23.
24.
Baydogan N, Karacasu O, Cimenoglu H (2012) J Sol–Gel Sci Technol 61:620–627CrossRef
25.
Baydogan N, Karacasu O, Cimenoglu H (2012) Thin Solid Films 520:5790–5796CrossRef
26.
Gokcen M, Bal S, Yildirim G, Gulen M, Varilci A (2012) J Mater Sci Mater Electron 23:1971–1979CrossRef
27.
Farag AAM, Farooq WA, Yakuphanoglu F (2011) Microelectron Eng 88:2894–2899CrossRef
28.
29.
30.
Yakuphanoglu F, Caglar Y, Caglar M, Ilican S (2010) Mater Sci Semicond Process 13:137–140CrossRef
31.
32.
Mridha S, Dutta M, Basak D (2009) J Mater Sci Mater Electron 20:S376–S379CrossRef
33.
Keskenler EF, Tomakin M, Dogan S, Turgut G, Aydın S, Duman S, Gurbulak B (2013) J Alloys Compd 550:129–132CrossRef
34.
Li X, Zhang B, Zhu H, Dong X, Xia X, Cui Y, Ma Y, Du G (2008) J Phys D Appl Phys 41:035101 (5 pp)CrossRef
35.
Quemener V, Vines L, Monakhov EV, Svensson BG (2011) Thin Solid Films 519:5763–5766CrossRef
36.
37.
Turgut G, Keskenler EF, Aydın S, Dogan S, Duman S, Özçelik Ş, Gurbulak B, Esen B (2014) Phys Stat Solid A 211:80–86
38.
Sagar P, Kumar M, Mehra RM (2005) Mater Sci Pol 23:685–696
39.
Roknabadi MR, Behdani M, Arabshahi H, Hodeini N (2009) Int Rev Phys 12:153–157
40.
Ilıcan S, Caglar Y, Caglar M (2008) J Optoelectron Adv Mater 10:2578–2583
41.
Badran RI, Umar A, Al-Heniti S, Al-Hajry A, Al-Harbi T (2010) J Alloys Compd 508:375–379CrossRef
42.
Lee JD, Park CY, Kim HS, Lee JJ, Choo YG (2010) J Phys D Appl Phys 43:365403 (6 pp)CrossRef
43.
44.
45.
Tilley RJD (2006) Crystals and crystal structures. Wiley, England, p 255
46.
47.
Caglar Y, Arslan A, Ilican S, Hur E, Aksoy S, Caglar M (2013) J Alloys Compd 574:104–111CrossRef
48.
49.
Lupan O, Pauporte T, Viana B, Aschehoug P (2011) Electrochim Acta 56:10543–10549CrossRef
50.
Keskenler EF, Dogan S, Turgut G, Gurbulak B (2012) Metall Mater Trans A 43A:5088–5095CrossRef
51.
Kasar RR, Deshpande NG, Gudage YG, Vyas JC, Sharma R (2008) Phys B 403:3724–3729CrossRef
52.
53.
Turgut G, Keskenler EF, Aydın S, Yılmaz M, Dogan S, Duzgun B (2013) Phys Scrp 87:035602 (8 pp)CrossRef
54.
55.
56.
Akbari B, Tavandashti MP, Zandrahimi M (2011) Iran J Mater Sci Eng 8:48–56
57.
Chen JT, Wang J, Zhang F, Zhang GA, Wu ZG, Yan PX (2008) J Cryst Growth 310:2627–2632CrossRef
58.
59.
Choi BG, Kim IH, Kim DH, Lee KS, Lee TS, Cheong B, Baik YJ, Kim WM (2005) J Eur Ceram Soc 25:2161–2165CrossRef
60.
Maldonado A, Tirado-Guerra S, Cázares JM, de la L Olvera M (2010) Thin Solid Films 518:1815–1820CrossRef
61.
Turgut G, Keskenler EF, Aydın S, Dogan S, Duman S, Sonmez E, Esen B, Duzgun B (2013) Mater Lett 102–103:106–108CrossRef
62.
63.
Lee HW, Lau SP, Wang YG, Tse KY, Hng HH, Tay BK (2004) J Cryst Growth 268:596–601CrossRef
64.
Rhoderick EH, Williams RH (1988) Metal–semiconductor contacts, 2nd edn. Clarendon, Oxford
65.
Jing-Jing M, Ke-Xin J, Bing-Cheng L, Fei F, Hui X, Chao-Chao Z, Chang-Le C (2010) Chin Phys Lett 27:107304CrossRef
66.
67.
Ziel AV (1968) Solid state physical electron, 2nd edn. Prentice-Hall, Englewood Cliffs
68.
Metadata
Title
An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol–gel spin coating technique
Authors
G. Turgut
S. Duman
F. S. Özçelik
E. Sönmez
B. Gürbulak
Publication date
01-09-2014
Publisher
Springer US
Published in
Journal of Sol-Gel Science and Technology / Issue 3/2014
Print ISSN: 0928-0707
Electronic ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-014-3410-9

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