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Journal of Computational Electronics
Published in:

19-03-2024

Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET

Authors: Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb

Published in: Journal of Computational Electronics | Issue 2/2024

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Abstract

This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (Ion/Ioff ~ 109) and minimum subthreshold swing (19 mV/decade) for the proposed Si0.7Ge0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si0.7Ge0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including IDS, CGS, CGD, gm, gds, fT, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including gm2, gm3, VIP2, VIP3, 1-dB compression point, IIP3, and IMD3 are also investigated for the proposed structure, which again demonstrates better performance.
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Metadata
Title
Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET
Authors
Sadhana Subhadarshini Mohanty
Pradipta Dutta
Jitendra Kumar Das
Sushanta Kumar Mohapatra
Shofiur Rahman
Reem Alanazi
Nadyah Alanazi
Abdullah N. Alodhayb
Publication date
19-03-2024
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 2/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02141-0

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