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Journal of Materials Science: Materials in Electronics

Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

  • 01-04-2023
Published in:
Authors
D. E. Yıldız
A. Tataroglu
Published in
Journal of Materials Science: Materials in Electronics | Issue 12/2023

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Abstract

The study focuses on the dielectric, impedance, and electrical properties of aluminum nitride (AlN) as an interfacial layer in semiconductor devices. AlN's high dielectric constant, excellent thermal conductivity, and wide bandgap make it ideal for MIM and MIS/MOS devices. The analysis uses admittance spectroscopy to investigate the capacitance and conductance of an Au/Ti/AlN/n-Si device, revealing the impact of interface traps and series resistance on device performance. The research highlights the frequency-dependent behavior of capacitance and conductance, providing insights into the dielectric properties and relaxation mechanisms of AlN. The study concludes that AlN is a promising material for MOS capacitors in electronic circuits, offering a comprehensive understanding of its electrical characteristics.
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Title
Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN
Authors
D. E. Yıldız
A. Tataroglu
Publication date
01-04-2023
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-10235-x
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