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2019 | OriginalPaper | Chapter

Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements

Authors : Pramila Mahala, Ankita Dixit, Navneet Gupta

Published in: Advances in Signal Processing and Communication

Publisher: Springer Singapore

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Abstract

We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.

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Metadata
Title
Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements
Authors
Pramila Mahala
Ankita Dixit
Navneet Gupta
Copyright Year
2019
Publisher
Springer Singapore
Book
Advances in Signal Processing and Communication

Print ISBN: 978-981-13-2552-6

Electronic ISBN: 978-981-13-2553-3

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-2553-3_57