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Journal of Computational Electronics
Published in:

28-02-2023

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Authors: Abdul Naim Khan, S. N. Mishra, S. Routray, Gaurav Chatterjee, K. Jena

Published in: Journal of Computational Electronics | Issue 3/2023

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Abstract

We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (ns), threshold voltage (Vth), drain current (Ids), gate capacitance (Cgs and Cgd), and unit gain cutoff frequency(fT) model equations are presented and simulated with MATLAB tool. It is observed that the insertion of the Ferro Pb(Zr, Ti)O3 PZT (lead zirconium titanate) material can improve the device’s performance. The proposed Ferro PZT MOSHEMT model accurately predicts a higher drain current of 1.14 A/mm, a high transconductance of 362 S/mm, a gate-to-source capacitance of 50.99 pF, a gate-to-drain capacitance of 38.25 pF, and high cutoff frequency of 0.033 THz for 20 nm AlGaN barrier layer. The results show good agreement with the TCAD-Atlas simulation and are satisfactory for the different AlGaN barrier layer thicknesses. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.
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Metadata
Title
Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
Authors
Abdul Naim Khan
S. N. Mishra
S. Routray
Gaurav Chatterjee
K. Jena
Publication date
28-02-2023
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 3/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-023-02024-w

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