Assessing the Suitability of DMG-HK Trapezoidal FinFET for High Temperature Applications

The chapter presents an analytical model to evaluate the DMG-HK Trapezoidal FinFET for high temperature applications, addressing the critical issue of device performance degradation at elevated temperatures. By solving the 3D scaling Poisson’s equation, the model examines various device characteristics such as surface potential, electric field, threshold voltage, DIBL, and subthreshold swing. A comparative analysis is conducted between DMG-HK Trapezoidal FinFET, DMG trapezoidal FinFET, and conventional trapezoidal FinFET across a wide temperature range (200-300 K). The results demonstrate that the proposed device exhibits improved capacitive coupling and reduced degradation, making it more suitable for high temperature applications. This work highlights the potential of DMG-HK Trapezoidal FinFET for analog and high-frequency applications, paving the way for further exploration in these areas.