Atomistic structure and energetics of interface between Mn-doped γ-Ga₂O₃ and MgAl₂O₄

The interface between an Mn-doped γ-gallium oxide (Ga₂O₃) thin film and an MgAl₂O₄ (001) substrate has been investigated using high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and first-principles calculations. A high-quality Mn-doped γ-Ga₂O₃ film with a defective spinel structure has been epitaxially grown by pulsed laser deposition. The γ-Ga₂O₃ crystal shows an uniform tetragonal distortion with a tetragonality of 1.05 throughout the film thickness of 75 nm. HRTEM and HAADF-STEM observations reveal that the γ-Ga₂O₃ and MgAl₂O₄ crystals form a coherent interface without any interfacial layers or precipitates. The atomistic structure and energies are theoretically evaluated for the interfaces with two types of termination plane, i.e., Mg- and Al₂O₄-termination of MgAl₂O₄. The cation sublattice is found to be continuous for both interfaces despite the defective spinel structure of Mn-doped γ-Ga₂O₃ with some vacant cation sites. The Al₂O₄-termination shows a lower interfacial energy than the Mg-termination under most conditions of the chemical potentials. This behavior is attributed to the energetic preference of the Mn–Al₂O₄ local configuration at the interface.