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Published in:
Semiconductor Diode Read chapter Read first chapter

2021 | OriginalPaper | Chapter

2. Bipolar Junction Transistor

Authors : Stephan J. G. Gift, Brent Maundy

Published in: Electronic Circuit Design and Application

Publisher: Springer International Publishing

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Abstract

The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H. Brattain, John Bardeen and William Shockley who were awarded the Nobel Prize in Physics in 1956 for this invention. It revolutionized the electronics industry by enabling miniaturization of electronic circuits and increased equipment portability. This chapter discusses the characteristics of the BJT and its use in elementary amplifier circuits. At the end of it, the student will be able to:

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previous chapter Semiconductor Diode
next chapter Field-Effect Transistor
Appendix
Available only for authorised users
Literature
R.L. Boylestad, L. Nashelsky, Electronic Devices and Circuit Theory, 11th edn. (Pearson Education, New Jersey, 2013)
J. Millman, C.C. Halkias, Integrated Electronics: Analog and Digital Circuits and Systems (Mc Graw Hill Book Company, New York, 1972)
F.H. Mitchell, F.H. Mitchell, Introduction to Electronics Design (Prentice Hall of India, New Delhi, 1995)
D.A. Neeman, Electronic Circuit Analysis and Design, 2nd edn. (McGraw Hill, New York, 2001)
M. Yunik, The Design of Modern Transistor Circuits (Prentice Hall, New Jersey, 1973)
Metadata
Title
Bipolar Junction Transistor
Authors
Stephan J. G. Gift
Brent Maundy
Copyright Year
2021
Book
Electronic Circuit Design and Application

Print ISBN: 978-3-030-46988-7

Electronic ISBN: 978-3-030-46989-4

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-3-030-46989-4_2