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Published in: Journal of Materials Science: Materials in Electronics 4/2016

11-12-2015

CdSe quantum dot/AlOx based non-volatile resistive memory

Authors: V. Kannan, Hyun-Seok Kim, Hyun-Chang Park

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2016

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Abstract

We present an all-solution processed bipolar non-volatile resistive memory device with CdSe quantum dot/metal–metal oxide/quantum dot structure. The two terminal device exhibits excellent switching characteristics with ON/OFF ratio >104. The device maintained its state even after removal of the bias voltage. The switching time is around 14 ns. Device did not show degradation after 4000 s retention test. The memory functionality was consistent even after multiple cycles of operation (100,000) and the device is reproducible. The switching mechanism is discussed on the basis of charge trapping in quantum dots with metal oxide serving as the barrier. The mechanism is supported by observation of variation in capacitance–frequency measurements.

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Metadata
Title
CdSe quantum dot/AlOx based non-volatile resistive memory
Authors
V. Kannan
Hyun-Seok Kim
Hyun-Chang Park
Publication date
11-12-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-4182-x

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