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Technical Physics
Published in: Technical Physics 8/2019

01-08-2019 | PHYSICAL ELECTRONICS

Charging of Ion-Implanted Dielectrics by Electron Irradiation

Authors: E. I. Rau, A. A. Tatarintsev, E. Yu. Zykova, S. V. Zaitsev

Published in: Technical Physics | Issue 8/2019

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Abstract

The charging kinetics of Al2O3 (sapphire) and SiO2 (α-quartz) dielectrics irradiated by inert gas ions (Ar+), metal ions (Ga+), and protons (H+) has been studied. It has been found that charging kinetics depends considerably on the type of irradiating ion. Also, it has been established that preirradiation of a dielectric target by an ionizing corpuscular radiation (protons, ions) substantially changes the charge characteristics of the dielectric surface. These differences depend on irradiating ion energy, which governs the depth of an accumulated negative charge layer versus the depth of ion preimplantation.
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Metadata
Title
Charging of Ion-Implanted Dielectrics by Electron Irradiation
Authors
E. I. Rau
A. A. Tatarintsev
E. Yu. Zykova
S. V. Zaitsev
Publication date
01-08-2019
Publisher
Pleiades Publishing
Published in
Technical Physics / Issue 8/2019
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI
https://doi.org/10.1134/S1063784219080188

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