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2016 | OriginalPaper | Chapter

2. CMOS Transistor Reliability and Variability Mechanisms

Author : Jiann-Shiun Yuan

Published in: CMOS RF Circuit Design for Reliability and Variability

Publisher: Springer Singapore

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Abstract

This chapter talks about device reliability mechanisms such as hot electron injection, gate oxide breakdown, negative bias temperature instability and process variation.

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Title: CMOS Transistor Reliability and Variability Mechanisms
Author: Jiann-Shiun Yuan
Publisher: Springer Singapore
Book: CMOS RF Circuit Design for Reliability and Variability
Print ISBN: 978-981-10-0882-5

Electronic ISBN: 978-981-10-0884-9

Copyright Year: 2016
DOI: https://doi.org/10.1007/978-981-10-0884-9_2