2007 | OriginalPaper | Chapter
Compact Modeling of Phase-Change Memories
Authors : K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
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A compact model for a phase-change memory cell is presented and confirmed by measurement. The model reproduces the non-linear current-voltage behavior of both set and reset states. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between set and reset states. The heat of fusion is also taken into account in the calculation of the amorphization.