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Journal of Computational Electronics
Published in:

19-12-2023

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Authors: Fahmida Sharmin Jui, Sabrina Alam, Anwar Jarndal, Christophe Gaquiere, Mohammad A. Alim

Published in: Journal of Computational Electronics | Issue 1/2024

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Abstract

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I–V and short pulse I–V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.
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Metadata
Title
Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT
Authors
Fahmida Sharmin Jui
Sabrina Alam
Anwar Jarndal
Christophe Gaquiere
Mohammad A. Alim
Publication date
19-12-2023
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-023-02121-w

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