CrO₂ Half Metal-Based Magnetic Tunnel Junction and Its Application for Digital Computing

The half metal (CrO₂) ferromagnet has attracted immense research interest because of its large Curie temperature of 390 K and 100% spin polarization. Silicene a two-dimensional monolayer material shows outstanding magnetic and electronic properties. We have calculated the spin dependent transport of electron in our modeled device consisting of two CrO₂ electrodes and out of plane silicene as scattering region. We have simulated the device in ATK software which uses non-equilibrium greens function and density function theory for calculation of the transport characteristics. The device is simulated to obtain IV curve and transmission spectrum. Furthermore, spin injection efficiency and tunneling magnetoresistance are calculated from the obtained transport characteristics. The transmission spectrum is found to be in agreement with the IV curve. The spin degree of freedom is expected to increase the speed, decrease power dissipation and add nonvolatility to devices. Also some basic logic functions have been realized from the modeled device.