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Fundamentals of Chalcogenides in Crystalline, Amorphous, and Nanocrystalline Forms Read chapter Read first chapter

2017 | OriginalPaper | Chapter

9. Data Storage Devices

Author : Gurinder Kaur Ahluwalia, Ph.D

Published in: Applications of Chalcogenides: S, Se, and Te

Publisher: Springer International Publishing

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Abstract

Tellurium based materials are used in present-day commercial optical memory devices and are potential candidates for future solid-state data storage devices. The mainstream memory technologies and systems include solid-state memory, hard disk drive, and optical disk. Each technology has its own special market and application although there is some overlap. Solid-state memories, which have high speed and compact size, are mainly used as primary (internal) memories, and magnetic and optical data storage devices are typically used as secondary devices for computer systems. In connection with the improvement of digital computers, extensive research work is being done to increase the capacity and speed of their memory devices. The phase change memory has been devoted to binary activity, which is the basic mechanism for data storage in optical and electrical memory devices. The strategy is always to make the spots/marks smaller and the density much higher. This chapter presents some of the important contributions in terms of materials development and device fabrication for data storage devices.
Major Parameters To Be Addressed for PCM Devices Include:
  • Switching speed
  • Cyclability endurance
  • Data retention time
  • Storage density—Size scaling

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Metadata
Title
Data Storage Devices
Author
Gurinder Kaur Ahluwalia, Ph.D
Copyright Year
2017
Book
Applications of Chalcogenides: S, Se, and Te

Print ISBN: 978-3-319-41188-0

Electronic ISBN: 978-3-319-41190-3

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-41190-3_9