Top

Published in:

2017 | OriginalPaper | Chapter

5. Defects in Monocrystalline Silicon

Authors : Wilfried von Ammon, Andreas Sattler, Gudrun Kissinger

Published in: Springer Handbook of Electronic and Photonic Materials

Publisher: Springer International Publishing

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

The aggregation of instrinsic point defects (vacancies and Si interstitials) in monocrystalline silicon has a major impact on the functioning of electronic devices. While agglomeration of vacancies results in the formation of tiny holes (so-called voids, around 100 nm in size, which have almost no stress field), the aggregation of Si interstitials exerts considerable stress on the Si matrix, which, beyond a critical size, generates a network of dislocation loops around the original defect. These dislocation loops are typically microns in size. Consequently, they are much more harmful to device functioning than vacancy clusters. However, the feature size in electronic devices has now shrunk below the 100 nm scale, meaning that vacancy aggregates are also no longer acceptable to many device manufacturers.

This chapter is intended to give an introduction to the properties of intrinsic point defects in silicon and the nucleation and growth of their aggregates. Knowledge in this field has grown further over the last decade. It is now possible to accurately simulate the aggregation process so that the defect behavior of semiconductor silicon can be precisely tailored to the needs of the device manufacturer. Additionally, the impact of various impurities on the aggregation process is elucidated.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

previous chapter Magnetic Properties: From Traditional to Spintronic

next chapter Diffusion in Semiconductors

5.1

P.M. Petroff, A.J.R. de Kock: J. Cryst. Growth 30, 117 (1975)

5.2

S. Sadamitsu, S. Umeno, Y. Koike, M. Hourai, S. Sumita, T. Shigematsu: Jpn. J. Appl. Phys. 32, 3675 (1993)

5.3

L.I. Bernewitz, B.O. Kolbesen, K.R. Mayer, G.E. Schuh: Appl. Phys. Lett. 25, 277 (1975)

5.4

B.O. Kolbesen, A. Mühlbauer: Solid State Electron. 25, 759 (1982)

5.5

W. Bergholz, W. Mohr, W. Drewes: Mater. Sci. Eng. B4, 359 (1989)

5.6

M. Itsumi, H. Akiya, T. Ueki, M. Tomita, M. Yamawaki: J. Appl. Phys. 78(10), 5984 (1995)

5.7

M. Miyazaki, S. Miyazaki, Y. Yanase, T. Ochiai, T. Shigematsu: Jpn. J. Appl. Phys. 34, 6303 (1995)

5.8

J.G. Park, J.M. Park, K.C. Cho, G.S. Lee, H.K. Chung: Effect of crystal defects in device characteristics, Proc. 2nd Int. Symp.Adv. Sci. Technol. Silicon Materials, Kona-Hawaii, ed. by M. Umeno (1996) p. 2519

5.9

M. Itsumi: Mater. Sci. Eng. B73, 184 (2000)

5.10

T. Bearda, M. Houssa, P. Mertens, J. Vanhellemont, M. Heyns: Appl. Phys. Lett. 75(9), 1255 (1999)

5.11

U. Lambert, A. Huber, J. Grabmeier, J. Vanhellemont, R. Wahlich, G. Kissinger: Microelectron. Eng. 48, 127 (1999)

5.12

E. Dornberger, D. Temmler, W. v. Ammon: J. Electrochem. Soc. 149(4), G226 (2002)

5.13

C. Kupfer, H. Roth, H. Dietrich: Mat. Sci. Semicon. Proc. 5, 381 (2003)

5.14

A.M. Eidenzon, N.I. Puzanov: Inorg. Mater. 33(3), 272 (1997)

5.15

J.G. Park, H.K. Chung: Wafer requirements: Memory devices, Proc. Silicon Wafer Symp., Portland (1999) p. D1

5.16

J.G. Park: J. Jpn. Assoc. Cryst. Growth 27(2), 14 (2000)

5.17

R. Falster: Advances of the defect engineering of polished silicon wafers: Perfect silicon and magic denuded zones, Proc. Silicon Wafer Symp., Portland (1999) p. E13

5.18

D. Gräf, M. Suhren, U. Lambert, R. Schmolke, A. Ehlert, W. v. Ammon, P. Wagner: J. Electrochem. Soc. 145(1), 275 (1998)

5.19

X. Yu, D. Yang, X. Ma, L. Li, D. Que: Semicond. Sci. Technol. 18, 399 (2003)

5.20

K. Sumino, I. Yonenaga, M. Imai, T. Abe: J. Appl. Phys. 54(9), 5016 (1983)

5.21

L. Jastrzebski, G.W. Cullen, R. Soydan, G. Harbeke, J. Lagowski, S. Vecrumba, W.N. Henry: J. Electrochem. Soc. 134(2), 466 (1987)

5.22

G. Wang, D. Yang, D. Li, Q. Shui, J. Yang, D. Que: Physica B 308–310, 450 (2001)

5.23

D. Maroudas, R. Brown: Appl. Phys. Lett. 62(2), 172 (1993)

5.24

A. Seeger, K.P. Chik: Phys. Status Solidi A 29, 455 (1968)

5.25

H.R. Schober: Phys. Rev. B 39, 13013 (1989)

5.26

R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides: Phys. Rev. Lett. 52, 1814 (1984)

5.27

D. Maroudas, R. Brown: Phys. Rev. B 47(23), 15562 (1993)

5.28

G.D. Watkins: Mater. Sci. Semicond. Process. 3, 227 (2000)

5.29

N.A. Stolwijk, J. Holzl, W. Frank, E.R. Weber, H. Mehrer: Appl. Phys. A 39, 37 (1986)

5.30

H. Bracht, N.A. Stolwijk, H. Mehrer: Phys. Rev. B 52, 16542 (1995)

5.31

H. Zimmermann, H. Ryssel: Appl.Phys. A 55, 121 (1992)

5.32

H. Bracht: Native point defects in silicon, Proc. 3rd Int. Symp. Defects Silicon III, Seattle, ed. by T. Abe, W.M. Bullis, S. Kobayashi, W. Lin, P. Wagner (1999) p. 357

5.33

W. v. Ammon, E. Dornberger, H. Oelkrug, H. Weidner: J. Cryst. Growth 151, 273 (1995)

5.34

M. Hourai, E. Kajita, T. Nagashima, H. Fujiwara, S. Umeno, S. Sadamitsu, S. Miki, T. Shigematsu: Mater. Sci. Forum 196–201, 1713 (1995)

5.35

E. Dornberger, W. v. Ammon: J. Electrochem. Soc 143(5), 1648 (1996)

5.36

T. Sinno, R.A. Brown, W. v. Ammon, E. Dornberger: Appl. Phys. Lett. 70(17), 2250 (1997)

5.37

M. Akatsuka, M. Okui, N. Morimoto, K. Sueoka: Jpn. J. Appl. Phys. 40, 3055 (2001)

5.38

R. Falster, V.V. Voronkov, F. Quast: Phys. Status Solidi B 222, 219 (2000)

5.39

N. Fukata, A. Kasuya, M. Suezawa: Jpn. J. Appl. Phys. 40, L854 (2001)

5.40

D.A. Antoniadis, I. Moskowitz: J. Appl. Phys. 53(10), 6780 (1982)

5.41

H.J. Gossmann, C.S. Rafferty, A.M. Vredenberg, H.S. Luftman, F.C. Unterwald, D.J. Eaglesham, D.C. Jacobson, T. Boone, J.M. Poate: Appl. Phys. Lett. 64(3), 312 (1994)

5.42

T. Sinno: Thermophysical properties of intrinsic point defects in crystalline silicon, Proc. 9th Int. Symp.Silicon Mater. Sci. Technol. Semicond. Silicon, Philadelphia, ed. by H.R. Huff, L. Fabry, S. Kishino (The Electrochemical Society, Pennington 2002) p. 212

5.43

T. Frewen, T. Sinno, E. Dornberger, R. Hoelzl, W. v. Ammon, H. Bracht: J. Electrochem. Soc. 150(11), G673 (2003)

5.44

K. Nakamura, R. Suewaka, B. Ko: ECS Solid State Lett. 3(3), N5 (2014)

5.45

K. Sueoka, E. Kamiyama, J. Vanhellemont, K. Nakamura: ECS Solid State Lett. 3(6), P69 (2014)

5.46

K. Sueoka, E. Kamiyama, J. Vanhellemont: J. Appl. Phys. 114, 153510 (2013)

5.47

T. Ueki, M. Itsumi, T. Takeda: Jpn. J. Appl. Phys. 37, 1669 (1998)

5.48

M. Itsumi: J. Cryst. Growth 237–239, 1773 (2002)

5.49

S. Umeno, Y. Yanase, M. Hourai, M. Sano, Y. Shida, H. Tsuya: Jpn. J. Appl. Phys. 38, 5725 (1999)

5.50

M. Nishimura, Y. Yamaguchi, K. Nakamura, J. Jablonski, M. Watanabe: Electrochem. Soc. Symp. Proc. 13, 188 (1998)

5.51

J. Ryuta, E. Morita, T. Tanaka, Y. Shimanuki: Jpn. Appl. Phys. 29, L1947 (1990)

5.52

H. Yamagishi, I. Fusegawa, N. Fujimaki, M. Katayama: Semicond. Sci. Techn. 7, A135 (1992)

5.53

P.J. Roksnoer, M.M.B. Van de Boom: J. Cryst. Growth 53, 563 (1981)

5.54

H. Bender, J. Vanhellemont, R. Schmolke: Jpn. J. Appl. Phys. 36, L1217 (1997)

5.55

R. Schmolke, W. Angelberger, W. v. Ammon, H. Bender: Solid State Phenom. 82–84, 231 (2002)

5.56

K. Nakai, M. Hasebe, K. Ohta, W. Ohashi: J. Cryst. Growth 210, 20 (2000)

5.57

H. Föll, B.O. Kolbesen: Appl. Phys. 8, 319 (1975)

5.58

P.M. Petroff, A.J.R. de Kock: J. Cryst. Growth 36, 1822 (1976)

5.59

J. Chikawa, T. Abe, H. Harada: Impurity effect on the formation of microdefects during silicon crystal growth. In: Semiconductor Silicon, ed. by H.R. Huff, T. Abe, B. Kolbesen (The Electrochemical Society, Pennington 1986) p. 61

5.60

H. Föll, U. Gösele, B.O. Kolbesen: J. Cryst. Growth 40, 90 (1977)

5.61

R. Schmolke, M. Blietz, R. Schauer, D. Zemke, H. Oelkrug, W.V. Ammon, U. Lambert, D. Gräf: In: Advanced Silicon Wafers for 0.18 μmDesign Rule and Beyond: Epi and fLASH!, High Purity Silicon VI, Phoenix 2000, ed. by C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson (The Electrochemical Society, Pennington 2000)

5.62

W. v. Ammon, E. Dornberger, P.O. Hansson: J. Cryst. Growth 198/199, 390 (1999)

5.63

V.V. Voronkov: J. Cryst. Growth 59, 625 (1982)

5.64

E. Dornberger, J. Esfandyari, D. Gräf, J. Vanhellemont, U. Lambert, F. Dupret, W. v. Ammon: In: Simulation of Grown-in Voids in Czochralski Silicon Crystals, Crystalline Defects and Contamination Control: Their Impact and Control in Device Manufacturing II, Nürnberg 1997, ed. by B.O. Kolbesen, P. Stallhofer, C. Claeys, F. Tardiff (The Electrochemical Society, Pennington 1997)

5.65

M. Hasebe, Y. Takeoka, S. Shinoyama, S. Naito: Ring-like distributed stacking faults in CZ-Si wafers. In: Defect Control in Semiconductors, ed. by K. Sumino (Elsevier, Amsterdam 1990) p. 157

5.66

H. Yamagishi, I. Fusegawa, K. Takano, E. Iino, N. Fujimaki, T. Ohta, M. Sakurada: In: Evaluation of FDPs and COPs in Silicon Single-Crystals, Semiconductor Silicon, San Francisco 1994, ed. by H.R. Huff, W. Bergholz, K. Sumino (The Electrochemical Society, Pennington 1994)

5.67

W. v. Ammon, E. Dornberger: In: Properties of Crystalline Silicon, EMIS Datareviews, Vol. 20, ed. by R. Hull (INSPEC, London 1999)

5.68

V.V. Voronkov, R. Falster: J. Cryst. Growth 194, 76 (1998)

5.69

E. Dornberger, D. Gräf, M. Suhren, U. Lambert, P. Wagner, F. Dupret, W. v. Ammon: J. Cryst. Growth 180, 343 (1997)

5.70

E. Dornberger, J. Esfandyari, J. Vanhellemont, D. Gräf, U. Lambert, F. Dupret, W. v. Ammon: In: Simulation of Non-Uniform Grown-in Void Distributions in Czochralski Crystal Growth, Semiconductor Silicon, San Francisco 1998, ed. by H.R. Huff, U. Gösele, H. Tsuya (The Electrochemical Society, Pennington 1998)

5.71

M. Hourai, T. Nagashima, E. Kajita, S. Miki: In: Oxygen Precipation Behavior in Silicon During Czochralski Crystal Growth, Semiconductor Silicon, San Francisco 1994, ed. by H.R. Huff, W. Bergholz, K. Sumino (The Electrochemical Society, Pennington 1994) p. 156

5.72

T. Iwasaki, A. Tomiura, K. Nakai, H. Haga, K. Kojima, T. Nakashizu: In: Influence of Cooling Condition During Crystal Growth of CZ-Si on Oxide Breakdown Property, Semiconductor Silicon, San Francisco 1994, ed. by H.R. Huff, W. Bergholz, K. Sumino (The Electrochemical Society, Pennington 1994) p. 744

5.73

K. Takano, K. Kitagawa, E. Iino, M. Kimura, H. Yamagishi: Mater. Sci. Forum 196–201, 1707 (1995)

5.74

M. Akatsuka, M. Okui, S. Umeno, K. Sueoka: J. Electrochem. Soc. 150(9), G587 (2003)

5.75

J. Furukawa, H. Tanaka, Y. Nakada, N. Ono, H. Shiraki: J. Cryst. Growth 210, 26 (2000)

5.76

V.V. Voronkov, R. Falster: J. Appl. Phys. 86(11), 5975 (1999)

5.77

A. Natsume, N. Inoue, K. Tanahashi, A. Mori: J. Cryst. Growth 225, 221 (2001)

5.78

T. Sinno, E. Dornberger, W. v. Ammon, R.A. Brown, F. Dupret: Mater. Sci. Eng. 28, 149 (2000)

5.79

Z. Wang, R. Brown: J.Crystal Growth 231, 442 (2001)

5.80

A. Sattler, W. von Ammon, M. Weber, W. Haeckl, H. Schmidt: Semiconductor Wafers of Silicon and Method for Their Production, US Patent Application 8043427B2 (2007)

5.81

K. Tanahashi, N. Inoue: J. Mat. Sci. Mater. Electron. 10, 359 (1999)

5.82

J. Vanhellemont, E. Kamiyama, K. Sueoka: ECS Solid State Lett. 3(5), X3–X4 (2014)

5.83

K. Sueoka, E. Kamiyama, J. Vanhellemont, K. Nakamura: Phys. Stat. sol. B 251(11), 2159 (2014)

5.84

E. Dornberger, W. v. Ammon, D. Gräf, U. Lambert, A. Miller, H. Oelkrug, A. Ehlert: The impact of dwell time above 900 ^∘C during crystal growth on the gate oxide integrity of silicon wafers, Proc. 4th Int. Symp.High Purity Silicon, San Antonio, ed. by C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson (1996) p. 140

5.85

J. Esfandyari, G. Hobler, S. Senkader, H. Pötzl, B. Murphy: J. Electrochem. Soc. 143, 995 (1996)

5.86

V.V. Voronkov, R. Falster: J. Cryst. Growth 198/199, 399 (1999)

5.87

V.V. Voronkov, R. Falster: J. Appl. Phys. 87(9), 4126 (2000)

5.88

T.A. Frewen, S.S. Kapur, W. Haeckl, W. v. Ammon, T. Sinno: J. Cryst. Growth 279, 258 (2005)

5.89

N.I. Puzanov, A.M. Eidenzon: Semicond. Sci. Technol. 7, 406 (1992)

5.90

K. Nakamura, T. Saishoji, J. Tomioka: J. Cryst. Growth 237–239, 1678 (2002)

5.91

V.V. Voronkov: Mater. Sci. Eng. B73, 69 (2000)

5.92

V.V. Voronkov, R. Falster: J. Cryst. Growth 226, 192 (2001)

5.93

T. Abe, M. Kimura: In: Semiconductor Silicon, 1990, ed. by H.R. Huff, K. Barraclough, J. Chikawa (The Electrochemical Society, Pennington 1990)

5.94

W. v. Ammon, P. Dreier: Silicon bulk technology for power devices, Proc. Int. Symp. Power Semicond. Devices, Tokyo (1988) p. 134

5.95

D.-R. Yang, Y.-W. Wang, H.-N. Yao, D.-L. Que: Prog. Nat. Sci. 3(2), 176 (1993)

5.96

W. v. Ammon, R. Hoelzl, T. Wetzel, D. Zemke, G. Raming, M. Blietz: Microelectron. Eng. 66, 234 (2003)

5.97

W.V. Ammon, A. Ehlert, U. Lambert, D. Gräf, M. Brohl, P. Wagner: In: Gate Oxide Related Bulk Properties of Oxygen Doped Floating Zone and Czochralski Silicon, Semiconductor Silicon, San Francisco 1994, ed. by H.R. Huff, W. Bergholz, K. Sumino (The Electrochemical Society, Pennington 1994)

5.98

K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta, W. Ohashi: J. Appl. Phys. 85(8), 4301 (2001)

5.99

J. Takahashi, K. Nakai, K. Kawakami, Y. Inoue, H. Yokota, A. Tachikawa, A. Ikari, W. Ohashi: Jpn. J. Appl. Phys. 42, 363 (2003)

5.100

F. Shimura, R.S. Hockett: Appl. Phys. Lett. 48, 224 (1986)

5.101

Q. Sun, K.H. Yao, H.C. Gatos, J. Lagowski: J. Appl. Phys. 71(8), 3760 (1992)

5.102

K. Aihara, H. Takeno, Y. Hayamizu, M. Tamatsuka, T. Masui: J. Appl. Phys. 88(6), 3705 (2000)

5.103

K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, W. Ohashi: Formation of grown-in defects in nitrogen doped CZ-Si crystals, Proc 3rd Int. Symp.Adv. Sci. Technol. Silicon Materials, Kona, ed. by M. Umeno (2000) p. 88

5.104

D. Gräf, U. Lambert, R. Schmolke, R. Wahlich, W. Siebert, E. Daub, W. v. Ammon: 300 mm Epi pp-wafer: Is there sufficient gettering?, Proc. 6th Int. Symp.High Purity Silicon, Seattle, ed. by C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson (2000) p. 319

5.105

H.J. Stein: Nitrogen in crystalline silicon, Proc. Int. Symp.Oxyg. Carbon, Hydrog.NitrogenCryst. Silicon, Boston, ed. by J.C. Mikkelsen Jr., S.J. Pearton, J.W. Corbett, S.J. Pennycook (1986) p. 523

5.106

Y. Itoh, T. Abe: Appl. Phys. Lett. 53(1), 39 (1988)

5.107

A. Hara, A. Ohsawa: Interaction of oxygen and other point defects in silicon crystals, Proc. Int. Symp.Adv. Sci. Technol. Silicon Materials, Kona, ed. by K. Kohra (1991) p. 47

5.108

H. Sawada, K. Kawakami: Phys. Rev. B 62(3), 1851 (2000)

5.109

H. Kageshima, A. Taguchi, K. Wada: Appl. Phys. Lett. 76(25), 3718 (2000)

5.110

R. Jones, S. Öberg, F.B. Rasmussen, B.B. Nielson: Phys. Rev. Lett. 72, 1882 (1994)

5.111

K.L. Brower: Phys. Rev. B 26, 6040 (1982)

5.112

H.J. Stein: Appl. Phys. Lett. 47(12), 1339 (1985)

5.113

K. Murakami, H. Itoh, K. Takita, K. Masuda: Appl. Phys. Lett. 45(2), 176 (1984)

5.114

W.V. Ammon, D. Gräf, W. Zulehner, R. Schmolke, E. Dornberger, U. Lambert, J. Vanhellemont, W. Hensel: In: Suppression of Point Defect Aggregation in FZ Silicon Single Crystals by Nitrogen Doping; Extendend Abstracts, Semiconductor Silicon, San Diego 1998, ed. by H.R. Huff, U. Gösele, H. Tsuya (The Electrochemical Society, Pennington 1998)

5.115

K. Nakamura, T. Saishoji, S. Togawa, J. Tomioka: The effect of nitrogen on the grown-in defect formation in CZ silicon crystals. In: Proceedings of the Kazusa Akademia Park Forum on the Science and Technology of Silicon Materials, ed. by K. Sumino (Kazusa Akademia Park, Chiba 1999) p. 116

5.116

V.V. Voronkov, R. Falster: J. Electrochem. Soc. 149(3), G167 (2002)

5.117

W.B. Knowlton, J.T. Walton, J.S. Lee, Y.K. Wong, E.E. Haller, W. v. Ammon, W. Zulehner: Mater. Sci. Forum 196–201, 1761 (1995)

5.118

T. Ono, S. Umeno, T. Tanaka, E. Asayama, M. Hourai: Behavior of defects in nitrogen doped CZ-Si crystals, Proc. Int. Symp. Forum Sci. Technol. Silicon Materials, Shonan Village Center, Kanagawa, ed. by H. Yamata-Kaneta, K. Sumino (Japan Technical Information Service, Tokyo 2001) p. 95

5.119

K. Nakamura, T. Saishoji, S. Togawa, J. Tomioka: Influence of nitrogen on the pont defect reaction in silicon, Proc. Int. Symp. Forum Sci. Technol. Silicon Materials, Shonan Village Cent., ed. by H. Yamata-Kaneta, K. Sumino (Japan Technical Information Service, Tokyo 2001) p. 109

5.120

W. v. Ammon, R. Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf: J. Cryst. Growth 226(1), 19 (2001)

5.121

P. Wagner, R. Oeder, W. Zulehner: Appl. Phys. A 46, 73 (1988)

5.122

W. v. Ammon, P. Dreier, W. Hensel, U. Lambert, L. Köster: Mater. Sci. Eng. B36, 33 (1996)

5.123

M.W. Qi, S.S. Tan, B. Zhu, P.X. Cai, W.F. Gu, M. Xu, T.S. Shi, D.L. Que, L.B. Li: J. Appl. Phys. 69, 3775 (1991)

5.124

A. Gali, J. Miro, P. Deak, C. Ewels, R. Jones: J. Phys. Condens. Mat. 8, 7711 (1996)

5.125

X. Yue, J. Chen, X. Ma, D. Yang: Mater. Sci. Eng. R74, 1 (2013)

5.126

H.Ch. Alt, H.E. Wagner: J.Appl.Phys. 106, 103511 (2009)

5.127

M. Suhren, D. Gräf, U. Lambert, P. Wagner: Crystal defects in highly boron doped silicon, Proc. 4th Int. Symp.High Purity Silicon, San Antonio, ed. by C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson (The Electrochemical Society, Pennington 1996) p. 132

5.128

K. Nakamura, R. Suewaka, T. Saishoji, J. Tomioka: The effect of impurities on the grown-in defects in CZ-Si crystals (B, C, N, O, Sb, As, P), Proc. Forum Sci. Technol. Silicon Mater., ed. by H. Yamad-Kaneta, K. Sumino (2003) p. 161

5.129

W. v. Ammon: Crystal growth of large diameter CZ Si crystals, Proc 2nd Int. Symp.Adv. Sci. Technol. Silicon Materials, Kona, ed. by M. Umeno (1996) p. 233

5.130

J. Vanhellemont, E. Kamiyama, K. Sueoka: ECS J. Solid State Sci. Technol. 2, 166 (2013)

5.131

T. Sinno, H. Susanto, R. Brown, W. v. Ammon, E. Dornberger: Appl. Phys. Lett. 75, 1544 (1999)

5.132

S. Ma, S. Wang: Phys.Rev. B 81, 193203 (2010)

5.133

T. Abe, T. Masui, H. Harada, J. Chikawa: In: VLSI Science and Technology, 1985, ed. by W.M. Bullis, S. Broyda (The Electrochemical Society, Pennington 1985)

5.134

R. Takeda, T. Minami, H. Saito, Y. Hirano, H. Fujimori, K. Kashima, Y. Matsushita: Influence of LSTD size on the formation of denuded zone in hydrogen-annealed CZ silicon wafers, Proc. 6th Int. Symp.High Purity Silicon, Phoenix, ed. by C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson (The Electrochemical Society, Pennington 2000) p. 331

5.135

M. Porrini, V.V. Voronkov, R. Falster: Mater. Sci. Eng. B 134, 185 (2006)

5.136

S. Kishino, M. Kanamori, N. Yoshihizo, M. Tajima, T. Iizuka: J. Appl. Phys. 50, 8240 (1978)

5.137

T. Fukuda: Appl. Phys. Lett. 65(11), 1376 (1994)

5.138

F. Shimura: J. Appl. Phys. 59, 3251 (1986)

5.139

M. Porrini: Cryst. Res. Technol. 40(10/11), 1054 (2005)

5.140

W. Sugimura, T. Ono, S. Umeno, M. Hourai, K. Sueoka: ECS Transactions 2(2), 95 (2006)

5.141

V.V. Voronkov, R. Falster, M. Porrini, J. Duchini: Phys. Status Solidi A 209(10), 1898 (2012)

5.142

M. Porrini, J. Duchini, A. Bazzali: Crystal. Res. Technol. 49(8), 564 (2014)

5.143

T. Abe, H. Harada, J. Chikawa: Mat. Res. Soc. Symp. Proc. 14, 1 (1983)

5.144

V.V. Voronkov, R. Falster: J. Electrochem. Soc. 149, G167 (2002)

5.145

G. Borionetti, D. Gambaro, M. Porrini, V.V. Voronkov: Grown-in microdefect distribution in doped silicon crystals. In: Semiconductor Silicon 2002–2, ed. by H.R. Huff, L. Fabry, S. Kishino (Electrochemical Society, Pennington 2002) p. 505

5.146

K. Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto, S. Kobayashi: Mater. Sci. Forum 196–201, 1737 (1995)

5.147

J. Vanhellemont, C. Claeys: J. Appl. Phys. 62(9), 3960 (1987)

Title: Defects in Monocrystalline Silicon
Authors: Wilfried von Ammon
Andreas Sattler
Gudrun Kissinger
Publisher: Springer International Publishing
Book: Springer Handbook of Electronic and Photonic Materials
Print ISBN: 978-3-319-48931-5

Electronic ISBN: 978-3-319-48933-9

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-3-319-48933-9_5