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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 5/2017

16-11-2016

Dependence of the optoelectronic properties of Se-doped silicon on the thickness of dopant film

Authors: Fei Tang, Zhiming Wu, Lingyan Du, Rui Li, Yadong Jiang

Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2017

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Abstract

Se doped silicon is prepared by femtosecond-laser irradiation of Si coated with Si/Se bilayer films. The effects of Se film thickness on optical and electrical properties of Se doped silicon are studied. With the increase of the thickness of dopant film, the infrared absorptance increases significantly at wavelengths from 1100 to 2200 nm. At −10 V bias, the responsivities at 1064 nm for samples prepared with Se film thicknesses of 50, 75, 100 and 125 nm are 0.310, 0.786, 0.911 and 1.22 A/W, respectively. This investigation demonstrates that the increase of doping concentration is beneficial to improve infrared absorption and photoresponse of Se doped silicon. This observation has potential to improve the property of Se doped silicon and facilitate its application in photoelectric devices.
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Metadata
Title
Dependence of the optoelectronic properties of Se-doped silicon on the thickness of dopant film
Authors
Fei Tang
Zhiming Wu
Lingyan Du
Rui Li
Yadong Jiang
Publication date
16-11-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 5/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-6026-8

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