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Journal of Computational Electronics
Published in:

07-04-2024

Device modeling and performance analysis of an all-inorganic lead-free Ag2BiI5 rudorffite-based solar cell with AgSCN as HTL via GPVDM simulation software

Author: Samaneh Mozaffari

Published in: Journal of Computational Electronics | Issue 3/2024

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Abstract

The unprecedented photo-electronic conversion efficiency (PCE) of organic–inorganic lead perovskite solar cells (PSCs), over 25% within a span of 10 years, makes them an optimistic solution for sustainable and renewable energy sources. However, issues associated with their toxicity and short lifetime raise public concern for their long-term utility. Therefore, resolving these two problems is urgent for developing sustainable and environmentally friendly PSCs. In this study, a novel configuration of a lead-free light absorbing layer with a rudorffite structure (Ag2BiI5) is simulated, using the GPVDM software with TiO2 and Spiro-OMeTAD as traditional electron and hole transport layers (HTLs). The proposed PSC structure is compared to other published results in the literature. In the meantime, by fitting the current density-voltage characteristic curves of theoretical data and experimental results, the precise photovoltaic parameters of the Ag2BiI5 structure are extracted. After optimizing the thickness of the Ag2BiI5 and replacing TiO2 with SnO2 and Spiro-OMeTAD with new a HTL of AgSCN, a PSC in the form of normal a FTO/SnO2/Ag2BiI5/AgSCN/Ag structure is designed. Further, the effect of the thickness of the AgSCN HTL, defect density of light absorbing layer, operating temperature and metal contacts on the photovoltaic performance of the device are thoroughly evaluated. Under the optimized AgSCN HTL thickness, the best theoretical efficiency of 3.61% is achieved for this normal configuration, which is the highest value reported among rudorffite light absorbing materials-based PSCs.
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Metadata
Title
Device modeling and performance analysis of an all-inorganic lead-free Ag2BiI5 rudorffite-based solar cell with AgSCN as HTL via GPVDM simulation software
Author
Samaneh Mozaffari
Publication date
07-04-2024
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 3/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02157-6

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