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Published in:
17-03-2016
Dielectric behavior associated with the synergetic microstructure and oxygen vacancies in CaCu3Ti4O12 ceramics
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2016
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Abstract
CaCu3Ti4O12 (CCTO) ceramics has been successfully fabricated by sol–gel processing. The microstructure of CCTO ceramics sintered at 1050 °C exhibits the inhomogeneity with the large grain in the order of several tens of micrometers separated by the nano-scale small grain in the grain boundary. And with the sintered temperatures increasing to 1075 °C, the small grain in the grain boundary gradually grows up, accompanied by the emergence of secondary phase CuxO. The temperature dependence of dielectric properties has been demonstrated that with the emergence of secondary phase, the dielectric constant for the ceramics sintered at 1075 °C is inferior to the one of the ceramics sintered at 1050 °C from room temperature to 250 °C. Defect model related to the contribution of the second ionized oxygen vacancies in the grain boundary are proposed, supported by the thermal activation theory.