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18-03-2019 | Issue 8/2019

Journal of Materials Science: Materials in Electronics 8/2019

Direct correlation between the band gap and dielectric loss in Hf doped BaTiO3

Journal:
Journal of Materials Science: Materials in Electronics > Issue 8/2019
Authors:
Aanchal Sati, Anil Kumar, Vikash Mishra, Kamal Warshi, Archna Sagdeo, Shahid Anwar, Rajesh Kumar, P. R. Sagdeo
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Abstract

Effect of Hf doping at Ti site in BaTiO3 on the optical band gap (Eg), Urbach energy (Eu), dielectric constant (ε) and dielectric loss i.e. loss tangent (tanδ) have been investigated. It has been observed that with Hf doping, the value of Eg and Eu systematically increases whereas; the value of dielectric constant and dielectric loss systematically decreases. The decrease in the value of dielectric constant has been explained in terms of reduction in the tetragonality i.e. by c/a ratio. In the present investigation, it has been proposed that increase in the value of Eg and Eu, leads to decrease in the tunneling probability of electron from valence band to the conduction band which may result in decrease in the value of the dielectric loss. Present investigations clearly suggest that the value of dielectric loss is effectively controlled by Eg. Thus, through present studies, a new methodology has been proposed for understanding the origin of dielectric loss. Moreover, a possible correlation between the Eg and tanδ in terms of tunneling probability has been provided.

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