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Journal of Materials Science: Materials in Electronics
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13-06-2016

Dopant induced polarity inversion in polar ZnO nanorods

Authors: Neelam Rathore, Shaibal K. Sarkar

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2016

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Abstract

Highly oriented and polarity controlled ZnO nanorod thin films are deposited by chemical bath deposition where the preferred polarity depends on the anionic nature of the Zn salt. Significant differences are noticed in magnesium (Mg) doping concentration on Zn- and O-polar ZnO nanorods. Higher doping concentration is achieved in Zn polar nanorods, which is characterized with different spectroscopic techniques. A noteworthy contribution in morphological changes is noted upon by Mg doping on both Zn- and O-polar ZnO nanorods. Polarity inversion of the individual nanorods are found at certain doping condition, characterized by chemical etching rate measurements and Schottky Barrier Height determination of the individual nanorod.
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Literature
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Metadata
Title
Dopant induced polarity inversion in polar ZnO nanorods
Authors
Neelam Rathore
Shaibal K. Sarkar
Publication date
13-06-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5088-y

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